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Russian Microelectronics

, Volume 41, Issue 1, pp 15–24 | Cite as

Influence of optical properties of the SOI structure on the wafer temperature during rapid thermal annealing

  • V. I. RudakovEmail author
  • V. V. Ovcharov
  • V. P. Prigara
Article

Abstract

Optical characteristics are compared theoretically, and temperature differences of the Si wafer with the B-doped SOI structure and substrate wafer are evaluated during rapid thermal annealing. It is shown that under identical annealing conditions and temperatures above 800 K, the difference in their temperatures can reach ∼30 K. We studied the dependence of the total emissivity and temperature of the wafer with the SOI structure on the concentration of the doping impurity in the Si layer. The method of the quantitative analysis of variations of the wafer temperature under invariable annealing conditions depending on the variations of emissivity of its surfaces is suggested.

Keywords

Emissivity Total Emissivity Rapid Thermal Annealing Back Side RUSSIAN Microelectronics 
These keywords were added by machine and not by the authors. This process is experimental and the keywords may be updated as the learning algorithm improves.

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Copyright information

© Pleiades Publishing, Ltd. 2012

Authors and Affiliations

  • V. I. Rudakov
    • 1
    Email author
  • V. V. Ovcharov
    • 1
  • V. P. Prigara
    • 1
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia

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