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Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures

Abstract

The initial Ti(8 nm)/Co(10 nm)/Ti(5 nm) structures formed on the Si(100) substrate by magnetron sputtering were subjected to two-stage rapid thermal annealing (RTA) in the nitrogen ambient. The samples of the structures were controlled using the time-of-flight SIMS, the Auger spectroscopy, scanning electron microscopy, X-ray dispersion microprobe analysis, and measurements of the layer resistance at each stage of annealing. At the RTA-1 stage (550°C, 45 s), a sacrificial layer formed on the surface. This layer consisted of the titanium (oxy)nitride coating, into which the residual impurities (O, C, and N) were forced out, and the transient Co-Si-Ti(TiO,TiN) layer with a high cobalt content and a low (trace) titanium content. After the selective removal of this sacrificial layer, the surface composition corresponded to monosilicide CoSi, which transformed into the highly conductive CoSi2 phase at the RTA-2 stage (830°C, 25 s).

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Correspondence to V. I. Rudakov.

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Original Russian Text © V.I. Rudakov, Yu.I. Denisenko, V.V. Naumov, S.G. Simakin, 2011, published in Mikroelektronika, 2011, Vol. 40, No. 6, pp. 424–429.

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Rudakov, V.I., Denisenko, Y.I., Naumov, V.V. et al. Control of the formation of ultrathin CoSi2 layers during the rapid thermal annealing of Ti/Co/Ti/Si(100) structures. Russ Microelectron 40, 389–394 (2011). https://doi.org/10.1134/S1063739711060102

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Keywords

  • Rapid Thermal Annealing
  • RUSSIAN Microelectronics
  • Sacrificial Layer
  • Auger Spectroscopy
  • Nitride Coating