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Methods of separation of semiconductor devices by reliability with the use of a low-frequency noise and X-ray irradiation

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Abstract

Methods of the separation of semiconductor devices (SDs) by reliability with the use of parameters of low-frequency (LF) noise under the effect of X-ray irradiation are considered. Different methods of the separation of SDs by reliability depending on their constructive features are suggested.

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Authors and Affiliations

  1. Voronezh State Technical University, Moskovskii pr. 14, Voronezh, 394026, Russia

    M. I. Gorlov, D. Yu. Smirnov & E. A. Zolotareva

Authors
  1. M. I. Gorlov
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  2. D. Yu. Smirnov
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  3. E. A. Zolotareva
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Corresponding author

Correspondence to M. I. Gorlov.

Additional information

Original Russian Text © M.I. Gorlov, D.Yu. Smirnov, E.A. Zolotareva, 2011, published in Mikroelektronika, 2011, Vol. 40, No. 1, pp. 52–56

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Gorlov, M.I., Smirnov, D.Y. & Zolotareva, E.A. Methods of separation of semiconductor devices by reliability with the use of a low-frequency noise and X-ray irradiation. Russ Microelectron 40, 47–51 (2011). https://doi.org/10.1134/S1063739710061010

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  • DOI: https://doi.org/10.1134/S1063739710061010

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