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Influence of the pressure of the gas medium and duration of controlling pulses on the stability of characteristics of memory cells based on electroformed Si-SiO2-W structures

  • Micro- and Nanoelectronic Devices
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Abstract

The results of experimental investigations of the effect of air pressure and the duration of the voltage pulse on the current-voltage characteristics and stability of the switching process in electroformed open Si-SiO2-W sandwich-structures are presented. It is shown that the mechanism of disappearance of the particles of the conducting phase (PCP) formed during electroforming of the surface layers of silicon dioxide is their (silicon atoms) repeated oxidation by oxygen from the gas phase over the structure. In this case, the width of the insulating spacing in the conducting medium formed of PCPs, which specifies the conductivity of the electroformed structure, is determined by the balance of processes of formation of PCPs under the effect of the electron flux and their thermally activated disappearance, which is shifted towards the latter as the oxygen pressure in the gas phase increases. The existence of an optimal pressure, at which the limiting number of rewriting cycles of the memory cell based on the Si-SiO2-W structure is maximal and can reach 106 in the case of using short controlling voltage pulses, is shown.

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Authors and Affiliations

  1. Yaroslavl Branch, Physical-Technological Institute, Russian Academy of Sciences, Yaroslavl, Russia

    V. M. Mordvintsev, S. E. Kudryavtsev, V. L. Levin & L. A. Tsvetkova

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  1. V. M. Mordvintsev
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  2. S. E. Kudryavtsev
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  3. V. L. Levin
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  4. L. A. Tsvetkova
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Correspondence to V. M. Mordvintsev.

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Original Russian Text © V.M. Mordvintsev, S.E. Kudryavtsev, V.L. Levin, L.A. Tsvetkova, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 5, pp. 337–347.

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Mordvintsev, V.M., Kudryavtsev, S.E., Levin, V.L. et al. Influence of the pressure of the gas medium and duration of controlling pulses on the stability of characteristics of memory cells based on electroformed Si-SiO2-W structures. Russ Microelectron 39, 313–322 (2010). https://doi.org/10.1134/S1063739710050033

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  • DOI: https://doi.org/10.1134/S1063739710050033

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