Influence of the pressure of the gas medium and duration of controlling pulses on the stability of characteristics of memory cells based on electroformed Si-SiO2-W structures
- 20 Downloads
The results of experimental investigations of the effect of air pressure and the duration of the voltage pulse on the current-voltage characteristics and stability of the switching process in electroformed open Si-SiO2-W sandwich-structures are presented. It is shown that the mechanism of disappearance of the particles of the conducting phase (PCP) formed during electroforming of the surface layers of silicon dioxide is their (silicon atoms) repeated oxidation by oxygen from the gas phase over the structure. In this case, the width of the insulating spacing in the conducting medium formed of PCPs, which specifies the conductivity of the electroformed structure, is determined by the balance of processes of formation of PCPs under the effect of the electron flux and their thermally activated disappearance, which is shifted towards the latter as the oxygen pressure in the gas phase increases. The existence of an optimal pressure, at which the limiting number of rewriting cycles of the memory cell based on the Si-SiO2-W structure is maximal and can reach 106 in the case of using short controlling voltage pulses, is shown.
KeywordsMemory Cell Versus Characteristic Voltage Pulse Sandwich Structure RUSSIAN Microelectronics
Unable to display preview. Download preview PDF.
- 1.Mordvintsev, V.M., Kudryavtsev, S.E., and Levin, V.L., Electroforming as the Process of Self-Formation of Conducting Nanostructures for the Cells of Power-Independent Electrically Reprogrammable Memory, Ross. Nanotekhnol., 2009, vol. 4, nos. 1–2, pp. 174–182.Google Scholar
- 2.Mordvintsev, V.M., Kudryavtsev, S.E., and Levin, V.L., Highly-Stable Power-Independent Electrically Reprogrammable Memory Based on Self-Forming Conducting Nanostructures, Ross. Nanotekhnol., 2009, vol. 4, nos. 1–2, pp. 174–182.Google Scholar
- 3.Dirnley, J., Stownkham, A., and Morgan, D. Electrical Phenomena in Amorphous Oxide Films, Usp. Fiz. Nauk, 1974, vol. 112, no. 1, pp. 83–127.Google Scholar
- 4.Pagnia, H. and Sotnik, D., Bistable Switching in Electroformed Metal-Insulator-Metal Devices, Phys. Status Solidi A, 1988, vol. 108, no. 11, pp. 11–65.Google Scholar
- 5.Mordvintsev, V.M. and Shumilova, T.K., Procedure of Monitoring of Etching of the Nanodimensional Dielectric Layer in situ Via Measuring the Admittance of the System, Mikroelektronika, 1999, vol. 28, no. 2, pp. 122–133 [Russian Microelectronics (Engl. Transl.), 1999, vol. 28, no. 2, pp. 114–123].Google Scholar
- 6.Groshkovskii, Ya., Tekhnika vysokogo vacuuma (Technique of High Vacuum), Moscow: Mir, 1975.Google Scholar
- 7.Mordvintsev, V.M. and Kudryavtsev, S.E., Investigation of Conductivity and Electroforming of Open Si-SiO2-W Sandwich-Structures Based on Highly-Doped Silicon, Mikroelektronika, 2007, vol. 36, no. 6, pp. 423–436 [Russian Microelectronics (Engl. Transl.), 2007, vol. 36, no. 6, pp. 371–383].Google Scholar
- 8.Mordvintsev, V.M. and Levin, V.L., Model of Conductivity of the Nano-MIM-Diode with a Carbonaceous Active Medium Allowing for Percolation Effects, Zh. Tekh. Fiz., 1999, vol. 69, no. 11, pp. 66–73.Google Scholar
- 9.Mordvintsev, V.M. and Kurdyavtsev, S.E., Features of the Electroforming Process in Open Si-SiO2-W Sandwich-Structures with a Nanometer Insulating Gap, Mikroelektronika, 2001, vol. 30, no. 5, pp. 363–363 [Russian Microelectronics (Engl. Transl.), 2001, vol. 30, no. 5, pp. 303–311].Google Scholar
- 10.Mordvintsev, V.M., Kudryavtsev, S.E., and Levin, V.L., Qualitative Difference of Mechanisms of Electroforming in the Si-SiO2-W Structures for Si of n- and p-Types of Conduction, Fiz. Tekh. Poluprovodn., 2005, vol. 39, no. 2, pp. 222–229 [Semiconductors (Engl. Transl.), 2005, vol. 39, no. 2, pp. 206–213].Google Scholar