Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics

Abstract

Certain results of experimental investigations of recent years devoted to new materials of undergate dielectrics and gates for field-effect MOS transistors based on high-k metal oxides and metal layers, respectively, are presented. The laboratory technology of fabrication of a functional field-effect transistor based on the TaN/LaAlO3/Si structure is described briefly.

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Correspondence to Yu. A. Matveev.

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Original Russian Text © A.V. Zenkevich, Yu.Yu. Lebedinskii, Yu.A. Matveev, N.S. Barantsev, Yu.A. Voronov, A.V. Sogoyan, V.N. Nevolin, V.I. Chichkov, S. Spiga, M. Fanchulli, 2010, published in Mikroelektronika, 2010, Vol. 39, No. 3, pp. 184–194.

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Zenkevich, A.V., Lebedinskii, Y.Y., Matveev, Y.A. et al. Synthesis and investigation of new materials in MIS structures for the development of physical foundations of CMOS technologies of nanoelectronics. Russ Microelectron 39, 165–174 (2010). https://doi.org/10.1134/S1063739710030030

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Keywords

  • Rapid Thermal Annealing
  • RUSSIAN Microelectronics
  • Vacuum Annealing
  • Metal Gate
  • Effective Work Function