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Russian Microelectronics

, 38:385 | Cite as

Simulation of the effects of deep grooving in silicon in the plasmochemical cyclic process

  • A. S. Shumilov
  • I. I. Amirov
  • V. F. LukichevEmail author
Device and Process Modeling and Simulation

Abstract

The results of computer simulation of the effects of the formation of deep groove profiles in silicon during the cyclic etching-passivating process in SF6/C4F8 plasma are reported. It is shown that the groove profile varies under variations in one of the basic parameters of the process, the etching-passivation time ratio at different probabilities of the reactions of etching and the deposition of a fluorocarbon film. The sensitivity of the model to these parameters is determined. Grooves with different tilt angles of walls are simulated, and the opportunity for controlling the groove profile by varying the parameters during grooving is shown.

PACS

52.77.Bn 81.65.Cf 

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Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  • A. S. Shumilov
    • 1
  • I. I. Amirov
    • 1
  • V. F. Lukichev
    • 2
    Email author
  1. 1.Institute of Physics and Technology, Yaroslavl BranchRussian Academy of SciencesYaroslavlRussia
  2. 2.Institute of Physics and TechnologyRussian Academy of SciencesMoscowRussia

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