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Magnetoresistance of multilayered structures obtained by the magnetron method

Abstract

Magnetoresistance of the FeNi/Cu/Co spin-gate structures and multilayered Co/Cu/Co structures is investigated. By the example of spin-gate structures with spontaneously induced magnetic anisotropy, the curves of anisotropic and giant magnetoresistance (AMR and GMR) are compared in four geometry configurations: mutual orientations of the current, magnetic field, and easy magnetization axis. Both in the first case and in the case of the multilayered Co/Cu/Co structures deposited in the external magnetic field, the GMR effect substantially depends on the geometry configuration of its measurement.

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Correspondence to V. V. Naumov.

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Original Russian Text © V.V. Naumov, E. Yu. Buchin, 2009, published in Mikroelektronika, 2009, Vol. 38, No. 5, pp. 369–373.

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Naumov, V.V., Buchin, E.Y. Magnetoresistance of multilayered structures obtained by the magnetron method. Russ Microelectron 38, 334–338 (2009). https://doi.org/10.1134/S1063739709050060

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PACS

  • 68.37.-d