Russian Microelectronics

, Volume 38, Issue 4, pp 279–284 | Cite as

Calculation of the concentration profile of copper in the TiN/CoSi2/Si system during thermal heating

  • V. I. RudakovEmail author
  • V. N. Gusev
Computational Electrochemistry


The results of the calculation of concentration profiles of copper in the system Cu/TiN/CoSi@2/Si-substrate under thermal heating to 600°C are presented. Possible diffusion mechanisms of Cu in the TiN and CoSi2 films and bulk Si are considered.




Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.


  1. 1.
    Rudakov, V.I. and Gusev, V.N., Microelektronika, 2008, vol. 37, no. 4, p. 245 [Russian Microelectronics (Engl. Transl.), vol. 37, no. 4, p. 215].Google Scholar
  2. 2.
    Harper, J.M.E., Charai, A., Stolt, L., d’Heurle, F.M., and Fryer, P.M., Appl. Phys. Lett., 1990, vol. 56, no. 25, p. 2519.CrossRefGoogle Scholar
  3. 3.
    Olowolafe, J.O., Blanpain Jian Li B., and Mayer, J.W., Appl. Phys. Lett., 1990, vol. 57, no. 13, p. 1307.CrossRefGoogle Scholar
  4. 4.
    Chamberlain, M.V., Thin Sol. Films, 1982, vol. 91, p. 155.CrossRefGoogle Scholar
  5. 5.
    Murarka, S.P., Silicides for VLSI Aplication New-York-London-Paris: Academic Press, 1983.Google Scholar
  6. 6.
    Boltaks, B.Ya., Diffuziya i tochechnye defekty v poluprovodnikakh (Diffusion and Point Defects in Semiconductors), Leningrad: Nauka, 1972.Google Scholar
  7. 7.
    Tekhnologiya SBIS. T. 1 (VLSI Technology. Vol. 1), 1986.Google Scholar
  8. 8.
    Samarskii, A.A., Teoriya raznostnykh skhem (Theory of Difference Schemes), Moscow: Nauka, 1977.Google Scholar
  9. 9.
    Poate, J.M., Tu, K.N., and Mayer, J.W., Thin Films: Interdiffusion and Reactions, Wiley, 1978.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  1. 1.Yaroslavl’ Branch, Institute of Physics and TechnologyRussian Academy of SciencesYaroslavl’Russia

Personalised recommendations