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Russian Microelectronics

, Volume 38, Issue 4, pp 279–284 | Cite as

Calculation of the concentration profile of copper in the TiN/CoSi2/Si system during thermal heating

  • V. I. RudakovEmail author
  • V. N. Gusev
Computational Electrochemistry

Abstract

The results of the calculation of concentration profiles of copper in the system Cu/TiN/CoSi@2/Si-substrate under thermal heating to 600°C are presented. Possible diffusion mechanisms of Cu in the TiN and CoSi2 films and bulk Si are considered.

PACS

84.40.Ck 

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Copyright information

© Pleiades Publishing, Ltd. 2009

Authors and Affiliations

  1. 1.Yaroslavl’ Branch, Institute of Physics and TechnologyRussian Academy of SciencesYaroslavl’Russia

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