Advertisement

Russian Microelectronics

, Volume 37, Issue 4, pp 226–237 | Cite as

Potential applications of LF-noise spectroscopy to the development of new-generation gas sensors

  • M. I. MakoviychukEmail author
Materials and Microstructure Characterization

Abstract

The solution proposed relates to flicker-noise gas sensors under development, which differ from conventional chemical sensors in offering exceptional selectivity for the analysis of a gaseous environment. The classification and analytical justification are given of low-frequency-noise spectroscopy techniques and measures that are proposed for investigation of disordered semiconductors. The feasibility is shown of patterning processes for flicker-noise gas sensors. Some methods are proposed for these processes and for measurement procedures of gaseous-environment monitoring.

PACS numbers

07.07.Df 

Preview

Unable to display preview. Download preview PDF.

Unable to display preview. Download preview PDF.

References

  1. 1.
    Vol’kenshtein, F.F., Elektronnye protsessy na poverkhnosti poluprovodnikov pri khemosorbtsii (Electronic Processes on Semiconductor Surfaces under Chemisorption), Moscow: Nauka, 1987.Google Scholar
  2. 2.
    Ugryumov, R.B., Shaposhnik, A.V., and Voishchev, V.S., Spectral and Static Noise Characteristics of Semiconductor Gas Sensors in Equiresistance Conditions, Zh. Tekh. Fiz., 2004, vol. 74,issue 7, pp. 134–136 [Tech. Phys. (Engl. Transl.), vol. 49, no. 7, pp. 941–943].Google Scholar
  3. 3.
    Palenskis, V. and Shoblitskas, Z., Origin of 1/f Noise, Solid State Commun., 1982, vol. 43, no. 10, pp. 761–763.CrossRefGoogle Scholar
  4. 4.
    Bosman, G. and Zijlstra, R.J.J., Generation-Recombination Noise in p-Type Silicon, Solid-State Electron., 1982, vol. 25, no. 1, pp. 273–280.CrossRefGoogle Scholar
  5. 5.
    Uren, M.J., Day, D.J., and Kirton, M.J., 1/f and Random Telegraph Noise in Silicon Metal-Oxide-Semiconductor Field-Effect Transistors, Appl. Phys. Lett., 1985, vol. 47, no. 11, pp. 1195–1197.CrossRefGoogle Scholar
  6. 6.
    Makoviychuk, M.I., Noise Gas Sensor-An Element of an E-nose Sensor Array, in Materialy Vserossiiskoi konferentsii “Fizicheskie i fiziko-khimicheskie osnovy ionnoi implantatsii” (Proc. Natl. Conf. on Physical and Physicochemical Principles of Ion Implantation, Nizhni Novgorod, Russia, 2006), Nizhni Novgorod: NIFTI, 2006, pp. 95–96.Google Scholar
  7. 7.
    Makoviychuk, M.I., A New Electronic Nose, in Proc. 3rd Int. Workshop on Relaxed, Nonlinear and Acoustic, Optical Processes and Materials-Growth and Optical Properties, RNAOPM-2006 (Lutsk, Ukraine, 2006), Lutsk: Volyn University Press “Vezha,” 2006, pp. 1–14.Google Scholar
  8. 8.
    Makoviychuk, M.I. and Chapkevich, A.A., Low Frequency Current Noise in Silicon Microsensors: A New Perspective on Individual Defects and Flicker Noise, in Proc. 3rd Int. Workshop on Relaxed, Nonlinear and Acoustic, Optical Processes and Materials-Growth and Optical Properties, RNAOPM-2006 (Lutsk, Ukraine, 2006), Lutsk: Volyn University Press “Vezha,” 2006, pp. 42–45.Google Scholar
  9. 9.
    Chapkevich, A.L. and Makoviychuk, M.I., Low-Frequency Current-Noise Spectroscopy in the Analysis of Gases Adsorbed by a Silicon Surface, in Materialy Vtorogo Moskovskogo nauchnogo foruma (Proceeedings of the Second Moscow Science Forum), book II: Moskovskaya nauka — problemy i perspektivy (Science in Moscow: Challenges and Future), Moscow: MKNT, 2005, pp. 767–778.Google Scholar
  10. 10.
    Makoviychuk, M.I., Sister, V.G., Orlikovsky, A.A., and Chapkevich, A.L., Development of a Semiconductor Gas Sensor Implementing Adsorption/Desorption Flicker-Noise Spectroscopy for Monitoring Persistent Organic Environmental Contaminants, in Materialy XVI Mezhdunarodnogo soveshchaniya “Radiatsionnaya fizika tverdogo tela” (Proc. XVI Int. Conf. on the Radiation Physics of Solids, Sevastopol, Ukraine, 2006), Moscow: MGIEM, 2006, pp. 20–27.Google Scholar
  11. 11.
    Tetelbaum, D.I., Trushin, S.A., Mikhaylov, A.N., Mukhamatullin, A.K., and Gaponova, D.M., The Formation of Si Nanocrystals and Modification of Their Properties by the Ion-Beam Procedures, in Proc. 8th JapanRussian Int. Symp. on Interaction of Fast Charged Particles with Solids (Kyoto University, Japan, 2002), 2003, pp. 167–171.Google Scholar
  12. 12.
    Tetelbaum, D.I., Ezhevskii, A.A., and Mikhailov, A.N., Extremal Dependence of the Concentration of Paramagnetic Centers Related to Dangling Bonds in Si on Ion-Irradiation Dose as Evidence of Nanostructuring, Fiz. Tekh. Poluprovodn. (St. Petersburg), 2003, vol. 37,issue 11, pp. 1380–1382 [Semiconductors (Engl. Transl.), vol. 37, no. 11, pp. 1342–1344].Google Scholar
  13. 13.
    Amirov, I.I., Morozov, O.V., Izuimov, M.O., Kalnov, B.A., Orlykovsky, A.A., and Valiev, K.A., Plasmochemical Etching of the Deep Silicon Trenches for the MEMS Elements Formation, Mikrosist. Tekh., 2004, vol. 6, pp. 6–10.Google Scholar

Copyright information

© MAIK Nauka 2008

Authors and Affiliations

  1. 1.Yaroslavl Branch, Institute of Physics and TechnologyRussian Academy of SciencesYaroslavlRussia

Personalised recommendations