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Formation of the TiN/CoSi2 system by rapid thermal annealing of a Co/Ti/Si structure

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Abstract

An Auger-spectroscopy investigation is conducted into the formation of the TiN/CoSi2 system by rapid thermal annealing of a Co/Ti/Si structure in a nitrogen atmosphere. Two different directions of temperature gradient under annealing are considered. It is established that TiN/CoSi2 formation occurs only when the temperature on the coated side of the specimen grows with depth. The influence of different factors is discussed.

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Correspondence to V. I. Rudakov.

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Original Russian Text © V.I. Rudakov, V.N. Gusev, 2008, published in Mikroelektronika, 2008, Vol. 37, No. 4, pp. 245–257.

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Rudakov, V.I., Gusev, V.N. Formation of the TiN/CoSi2 system by rapid thermal annealing of a Co/Ti/Si structure. Russ Microelectron 37, 215–225 (2008). https://doi.org/10.1134/S1063739708040021

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  • DOI: https://doi.org/10.1134/S1063739708040021

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