Abstract
Mg2Si film 350–600 nm thick was formed on Si(111) substrate by ultrafast reactive deposition of Mg. Then 10–15 nm thick films of FeSi or CrSi2 were grown as cover layers on Mg2Si by codeposition of Fe/Si or Cr/Si. In comparison with bare Mg2Si/Si film, the measured transparency losses in 0.1–1.1 eV range are ∼17–25 and 10–35% for the samples with the FeSi and CrSi2 layers, respectively. The measured at room temperature resistivity is ∼0.24 mΩ cm for FeSi and 1.7 mΩ cm for CrSi2. The photoresponse of structures FeSi/Mg2Si/Si and CrSi2/Mg2Si/Si illuminated with the light filtered by a silicon plate demonstrate the spectral sensitivity in the range 980–1200 nm and peak intensity ∼255 and ∼620 μA/W respectively.
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ACKNOWLEDGMENTS
The X-ray measurements were performed using the equipment of the Collective Facilities Center “Far Eastern Center of Structural Studies”, Institute of Chemistry, Far Eastern Branch, Russian Academy of Sciences.
Funding
The study was supported by a grant from the Russian Science Foundation no. 22-12-00036, https://rscf.ru/project/22-12-00036.
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Chernev, I.M., Gouralnik, A.S., Subbotin, E.Y. et al. FeSi and CrSi2 Thin Films as Transparent Conductive Layers for VIS/SWIR Sensitive Mg2Si Films Grown on Si. Bull. Russ. Acad. Sci. Phys. 87 (Suppl 3), S370–S374 (2023). https://doi.org/10.1134/S1062873823705718
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DOI: https://doi.org/10.1134/S1062873823705718