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Formation of Thin Films of InSb on Pristine and Modified Si(111) Using Solid Phase Epitaxy

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Bulletin of the Russian Academy of Sciences: Physics Aims and scope

Abstract

The formation of thin films of indium antimonide on Si(111) from a stoichiometric mixture with a thickness of 32–48 nm was performed by solid-phase epitaxy (SPE) at a temperature of 320–380°C under ultrahigh vacuum conditions. It is shown that the use of an array of high-density InSb seed islands makes it possible to form a large-block epitaxial InSb film, while a solid-phase epitaxy from a mixture deposited on a clean surface produces a granular polycrystalline film. Based on the analysis of low energy electron diffraction patterns, X-ray diffraction data and Raman spectra, the stresses in the resulting films were determined: in the out of plane direction the films are weakly compressed by 0.1–0.14% while in the in-plane direction the epitaxial film is compressed by 1.33%. Thus, we show the possibility of forming practically relaxed InSb epitaxial films on Si(111) without the use of buffer of extraneous chemical elements.

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ACKNOWLEDGMENTS

The authors are grateful to the Far Eastern Center of Structural Studies for performing the XRD investigation.

Funding

This work was partially supported by the funding of the Ministry of Education and Science of the Russian Federation project no. 0202-2021-0002.

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Authors and Affiliations

  1. Institute of Automation and Control Processes, Far Eastern Branch, Russian Academy of Sciences, 690041, Vladivostok, Russia

    D. L. Goroshko, S. V. Chusovitina, S. A. Dotsenko & O. A. Goroshko

  2. Institute of Chemistry, Far Eastern Branch, Russian Academy of Sciences, 690022, Vladivostok, Russia

    A. V. Gerasimenko

Authors
  1. D. L. Goroshko
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  2. S. V. Chusovitina
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  3. S. A. Dotsenko
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  4. O. A. Goroshko
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  5. A. V. Gerasimenko
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Correspondence to D. L. Goroshko.

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Goroshko, D.L., Chusovitina, S.V., Dotsenko, S.A. et al. Formation of Thin Films of InSb on Pristine and Modified Si(111) Using Solid Phase Epitaxy. Bull. Russ. Acad. Sci. Phys. 87 (Suppl 1), S29–S35 (2023). https://doi.org/10.1134/S1062873823704543

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