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Evaluating parameters of semiconductors from their microwave reflection spectra in a wide temperature range

  • Electrical Methods
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Abstract

The possibility has been shown for determining the thickness, conductivity, effective mass, carrier scattering coefficients, and concentration and activation energy of semiconductor-layer impurities based on measurement of the frequency dependence of the reflectivity of electromagnetic microwave radiation at different temperatures. A procedure for solving the inverse problem is described.

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Correspondence to D. A. Usanov.

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Original Russian Text © D.A. Usanov, A.E. Postel’ga, K.A. Gurov, 2017, published in Defektoskopiya, 2017, No. 2, pp. 44–52.

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Usanov, D.A., Postel’ga, A.E. & Gurov, K.A. Evaluating parameters of semiconductors from their microwave reflection spectra in a wide temperature range. Russ J Nondestruct Test 53, 117–125 (2017). https://doi.org/10.1134/S1061830917020073

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  • DOI: https://doi.org/10.1134/S1061830917020073

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