Russian Journal of Nondestructive Testing

, Volume 53, Issue 2, pp 117–125 | Cite as

Evaluating parameters of semiconductors from their microwave reflection spectra in a wide temperature range

Electrical Methods
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Abstract

The possibility has been shown for determining the thickness, conductivity, effective mass, carrier scattering coefficients, and concentration and activation energy of semiconductor-layer impurities based on measurement of the frequency dependence of the reflectivity of electromagnetic microwave radiation at different temperatures. A procedure for solving the inverse problem is described.

Keywords

semiconductor conductivity layer thickness impurity activation energy effective mass impurity concentration scattering coefficients microwave radiation 

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Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • D. A. Usanov
    • 1
  • A. E. Postel’ga
    • 1
  • K. A. Gurov
    • 1
  1. 1.Saratov State UniversitySaratovRussia

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