Russian Journal of Nondestructive Testing

, Volume 53, Issue 2, pp 117–125 | Cite as

Evaluating parameters of semiconductors from their microwave reflection spectra in a wide temperature range

  • D. A. Usanov
  • A. E. Postel’ga
  • K. A. Gurov
Electrical Methods


The possibility has been shown for determining the thickness, conductivity, effective mass, carrier scattering coefficients, and concentration and activation energy of semiconductor-layer impurities based on measurement of the frequency dependence of the reflectivity of electromagnetic microwave radiation at different temperatures. A procedure for solving the inverse problem is described.


semiconductor conductivity layer thickness impurity activation energy effective mass impurity concentration scattering coefficients microwave radiation 


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  1. 1.
    Usanov, D.A., Postel’ga, A.E., and Sysoev, N.Yu., Determining the conductivity and thickness of semiconductor layers based on microwave reflection spectra, Izv. VUZov. Elektronika, 2011, no. 4, pp. 71–77.Google Scholar
  2. 2.
    Usanov, D.A. and Postel’ga, A.E, Determination of the thickness, electrical conductivity, and impurity activation energy of semiconductor layers from microwave reflection spectra, Russ. J. Nondestr. Testing, 2014, vol. 50, no. 5, pp. 299–306.Google Scholar
  3. 3.
    Fistul’, V.I., Vvedenie v fiziku poluprovodnikov, 2-e izd., pererab. i dop., (Introduction to the Physics of Semiconductors), Moscow: Vysshaya Shkola, 1984, 2nd Ed.Google Scholar
  4. 4.
    Il’inskaya, L.S. and Podmar’kov, A.N., Poluprovodnikovye tenzodatchiki (Semiconducor Strain Gauges), Moscow-Leningrad: Energiya, 1966.Google Scholar
  5. 5.
    Skvortsov, A.A., Litvinenko, O.V., and Orlov, A.M, Determining deformation potential constants in n-Si, p-Si based on concentration anharmonicity, Fiz. Tekh. Poluprovodn. (St. Peterburg), 2003, vol. 37, no. 1, pp. 17–21.Google Scholar
  6. 6.
    Usanov, D.A. and Postel’ga, A.E., RF Patent no. 2516238, A method for determining conductivity and impurity activation energy in semiconductor layers, Byull. Izobret., 2014, no. 14.Google Scholar
  7. 7.
    Shklovskii, B.I. and Efros, A.L., Elektronnye svoistva legirovannykh poluprovodnikov (Electronic Properties of Doped Semiconductors), Moscow: Nauka, 1979.Google Scholar
  8. 8.
    Bonch-Bruevich, V.L. and Kalashnikov, K.G., Fizika poluprovodnikov (Physics of Semiconductors), Moscow: Nauka, 1977.Google Scholar

Copyright information

© Pleiades Publishing, Ltd. 2017

Authors and Affiliations

  • D. A. Usanov
    • 1
  • A. E. Postel’ga
    • 1
  • K. A. Gurov
    • 1
  1. 1.Saratov State UniversitySaratovRussia

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