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Compact diode-directly-pumped passively mode-locked TEM00 Nd:GdVO4 laser at 1341 nm using a semiconductor saturable absorber mirror

  • Solid State and Liquid Lasers
  • Published:
Laser Physics

Abstract

We report on a compact 880-nm diode-directly-pumped passively mode-locked TEM00 Nd:GdVO4 laser at 1341 nm with a semiconductor saturable absorber mirror (SESAM) for the first time. Under the absorbed pump power of 14.6 W, the maximum output power of 1.27 W was obtained at the repetition rate of 85.3 MHz with the pulse width of 45.3 ps, corresponding to an optical-optical efficiency of 8.8% and the slope efficiency of 33.3%, respectively. The beam quality factor was measured to be M 2 = 1.18, indicating a TEM00 mode.

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Authors and Affiliations

  1. Research Center for Laser Physics and Technology, Key Lab of Functional Crystal and Laser Technology, Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Beijing, 100190, China

    K. Liu, F. Q. Li, Y. Liu, D. Cao, Y. Bo, Q. J. Peng, D. F. Cui, J. Y. Zhang & Z. Y. Xu

  2. Graduate School of the Chinese Academy of Sciences, Beijing, 100190, China

    K. Liu, Y. Liu & D. Cao

Authors
  1. K. Liu
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  2. F. Q. Li
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  3. Y. Liu
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  4. D. Cao
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  5. Y. Bo
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  6. Q. J. Peng
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  7. D. F. Cui
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  8. J. Y. Zhang
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  9. Z. Y. Xu
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Corresponding author

Correspondence to Q. J. Peng.

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Original Text © Astro, Ltd., 2012

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Liu, K., Li, F.Q., Liu, Y. et al. Compact diode-directly-pumped passively mode-locked TEM00 Nd:GdVO4 laser at 1341 nm using a semiconductor saturable absorber mirror. Laser Phys. 22, 95–99 (2012). https://doi.org/10.1134/S1054660X12010112

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  • DOI: https://doi.org/10.1134/S1054660X12010112

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