Abstract
Room-temperature operation of a single longitudinal-mode c-cut Tm(6%), Ho(0.4%):YLF microchip laser is reported. An incident pump power of 713 mW is used to generate the maximum single-frequency output power of 17 mW at 2050.5 nm, which corresponds to the slope efficiency of 10%.
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Meng, P.B., Yao, B.Q., Zhou, R.L. et al. Diode-pumped room temperature single longitudinal mode lasing of Tm,Ho:YLF microchip laser at 2050.5 μm. Laser Phys. 21, 643–647 (2011). https://doi.org/10.1134/S1054660X11070243
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DOI: https://doi.org/10.1134/S1054660X11070243