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Specific character of the 119Sn thin films growth on amorphous Si by the CBPLD method

  • Advanced Laser Technologies
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Laser Physics

Abstract

The research of the 119Sn thin films growth on amorphous Si that is important for the multilayer periodical spin-tunnel nanostructures creation have been investigated in this paper. The 119Sn mono-isotopic thin films on the silicon substrates (100) had been received by crossed-beam pulsed laser deposition method (CBPLD). Similarly the [Fe/Si/Sn/Si] multilayer periodical structures have been deposited. The received samples were investigated by atomic-force microscopy, electronic microscopy and X-ray reflectometry methods. It has been established that at 119Sn film thickness up to 3 nm it is possible to received atomic-smooth surfaces with 0.5 nm roughness.

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Correspondence to V. V. Rocheva.

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Original Text © Astro, Ltd., 2011.

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Rocheva, V.V., Khaydukov, E.V., Novodvorsky, O.A. et al. Specific character of the 119Sn thin films growth on amorphous Si by the CBPLD method. Laser Phys. 21, 624–629 (2011). https://doi.org/10.1134/S1054660X11050240

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  • DOI: https://doi.org/10.1134/S1054660X11050240

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