Skip to main content
SpringerLink
Log in

2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure

  • Semiconductor Lasers
  • Published:
Laser Physics

Abstract

The GaInAsSb/AlGaAsSb double quantum well lasers with an emission wavelength 2.0 μm, using the separate-confinement asymmetric waveguide, have been designed and fabricated, showing high quantum efficiency and high power conversion efficiency at continuous-wave operation mode. The threshold current density of the device is as low as 92 A/cm2. The internal loss coefficient and the internal quantum efficiency are 1.0 cm−1 and 86.1%, respectively. The 35% maximum power conversion efficiency (PCE) and narrow far-field patterned were achieved.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Log in via an institution

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Institutional subscriptions

Similar content being viewed by others

References

  1. C. Lin, M. Grau, and O. Dier, Appl. Phys. Lett. 84, 5088 (2004).

    Article  ADS  Google Scholar 

  2. J. G. Kim, L. Shterengas, R. U. Martinelli, and D. Z. Garbuzov, Appl. Phys. Lett. 83, 1928 (2003).

    ADS  Google Scholar 

  3. D. Z. Garbuzov and H. Lee, IEEE Photon. Technol. Lett. 11, 796 (1999).

    Article  ADS  Google Scholar 

  4. H. K. Choi and G. W. Turner, IEEE Photo. Technol. Lett. 10, 940 (1998).

    Article  ADS  Google Scholar 

  5. A. Salhi and M. Garcia, IEEE Photon. Technol. Lett. 16,2427 (2004).

    Article  ADS  Google Scholar 

  6. C. Mermelstein, S. Simanowski, and J. Wagner, Appl. Phys. Lett. 77, 1581 (2000).

    Article  ADS  Google Scholar 

  7. L. Li, G. J. Liu, Zhanguo Li, M. Li, H. Li, and X. H. Wang, IEEE Photon. Technol. Lett. 20, 569 (2008).

    Article  ADS  Google Scholar 

  8. B. S. Ryvkin and E. A. Avrutin, J. Appl. Phys. 97, 123103 (2005).

    Google Scholar 

Download references

Author information

Authors and Affiliations

  1. State Key Laboratory on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun, 130022, China

    Z. G. Li, G. J. Liu, M. H. You, L. Li, M. Li, Y. Wang, B. S. Zhang & X. H. Wang

Authors
  1. Z. G. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  2. G. J. Liu
    View author publications

    You can also search for this author in PubMed Google Scholar

  3. M. H. You
    View author publications

    You can also search for this author in PubMed Google Scholar

  4. L. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  5. M. Li
    View author publications

    You can also search for this author in PubMed Google Scholar

  6. Y. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

  7. B. S. Zhang
    View author publications

    You can also search for this author in PubMed Google Scholar

  8. X. H. Wang
    View author publications

    You can also search for this author in PubMed Google Scholar

Corresponding author

Correspondence to Z. G. Li.

Additional information

Original Text © Astro, Ltd., 2009.

The article is published in the original.

Rights and permissions

Reprints and permissions

About this article

Cite this article

Li, Z.G., Liu, G.J., You, M.H. et al. 2.0 μm room temperature CW operation of InGaAsSb/AlGaAsSb laser with asymmetric waveguide structure. Laser Phys. 19, 1230–1233 (2009). https://doi.org/10.1134/S1054660X09060085

Download citation

  • Received:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1054660X09060085

PACS numbers

Search

Navigation