Abstract
Experimental measurements of linear electro-optical coefficients are reported for YAl3(BO3)4 (YAB) single crystals for the two principal tensor components xyz and yyy at the wavelength of a CW semiconducting GaAlAs laser emitting at 1040 nm. We have found the values of the Pockels coefficients to be equal to 0.21 ± 0.06 and 0.56 ± 0.08 pm/V for 123 and 222 Pockels components, respectively. Additional measurements performed for the thin-cut samples with the thickness varying within the 100–500 μm have confirmed the values of the corresponding parameters. We have eliminated a contribution of the piezooptical coefficients as well as for other disturbing factors. We have established that the crystals with a different number of defects do not show any differences, which indicate the principal role of the borate clusters on the observed effects. The temperature changes are very low (due to a low ionic contribution), and do not exceed 5–6%, which indicates the low contribution of the electron-phonon to the Pockels effect. Because the YAB crystals possess a very large photothermal damage (more than 15 GW/cm2) and are only slightly temperature dependent. Hence, they may be proposed as promising materials for high-power laser electro-optic modulators.
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Reshak, A.H., Majchrowski, A. & Imiolek, W. Pockels effect in yttrium aluminum borate single crystals. Laser Phys. 18, 1204–1206 (2008). https://doi.org/10.1134/S1054660X08100174
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DOI: https://doi.org/10.1134/S1054660X08100174