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Nonlinear optical study of amorphous SiN:H films on the Si(111) substrate

  • Novel Laser Materials
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Laser Physics

Abstract

A correlation between the resistivity-voltage dependences of the hydrogenated SiN/Si(111) films and the photo-induced third-harmonic generation (PITHG) at λ = 1064 nm in the reflected light regime was found. The contribution to the PITHG is both due to linear photo-induced surface changes as well as due to the hydrogen dopants. When the fundamental power density increases to higher than 1.2 GW/cm2, there occurs a drastic decrease of the PITHG. Maximal PITHG changes are observed at a pump-probe delay time about 18 ps and the value of the PITHG slightly increases with the enhanced applied dc-electric field during illumination by a third-harmonic laser beam as a photo-inducing one. The deviation from the tripled frequency wavelength to higher wavelengths substantially suppresses the output PITHG signal. The crucial role of the interface trapping levels and silicon-hydrogen charge transfer is shown.

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Authors and Affiliations

  1. Laboratoire LP2A, Universite de Perpignan, Paris, France

    B. Claudet

  2. Department of Ophthalmology, Silesia Medical University, 1 Medyków Sq., PL-41-200, Sosnowiec, Poland

    K. Michalska-Małecka

  3. Institute of Electronics, Military University of Technology, Warsaw, Poland

    K. Pluciński

  4. INFM and Physics Department, Polytechnic of Torino, C.so Duca degli Abruzzi 24, 10129, Torino, Italy

    P. Mandracci

  5. Institute of Physical Biology, South Bohemia University, Institute of System Biology and Ecology, Academy of Sciences, Nove Hrady, 37333, Czech Republic

    A. H. Reshak

Authors
  1. B. Claudet
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  2. K. Michalska-Małecka
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  3. K. Pluciński
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  4. P. Mandracci
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  5. A. H. Reshak
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Correspondence to B. Claudet.

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Original Text © Astro, Ltd., 2008.

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Claudet, B., Michalska-Małecka, K., Pluciński, K. et al. Nonlinear optical study of amorphous SiN:H films on the Si(111) substrate. Laser Phys. 18, 999–1002 (2008). https://doi.org/10.1134/S1054660X08080161

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  • DOI: https://doi.org/10.1134/S1054660X08080161

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