Abstract
We review our recent results on the investigation of carrier dynamics of semiconductor nanostructures, i.e., dot-in-a-well. We introduced a technique based on the measurement of time-resolved differential photoluminescence spectra induced by subpicosecond pump and probe laser pulses. In this technique, the temporal resolution was achieved by adjusting the temporal delay between the pump and probe pulses. Using such a new technique, we measured the exciton decay times and then studied the dependences of integrated photoluminescence intensity and photoluminescence linewidth on temperature in InAs quantum dots embedded in InGaAs/GaAs quantum wells. We gave consistent interpretations to our experimental results.
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Original Text © Astro, Ltd., 2007.