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A Giant Increase in the Electrical Conductivity of the High-Resistivity Film MoS2 Semiconductor under Continuous Proton Injection

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Abstract

The highly reproducible effect of a giant (10 000-fold) increase in the electrical conductivity of a film sample of a high-resistivity MoS2 semiconductor with a layered structure under continuous proton injection in dynamic equilibrium conditions is reported for the first time. The effect disappears when the process of proton injection is interrupted. The potential to control the composition and the properties of materials by doping them with charge carriers of different signs, masses, and energies (as a complement to traditional chemical doping) is noted.

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Authors and Affiliations

  1. Baikov Institute of Metallurgy and Materials Science, Russian Academy of Sciences, 119991, Moscow, Russia

    G. S. Burkhanov & S. A. Lachenkov

  2. Prokhorov General Physics Institute, Russian Academy of Sciences, 119991, Moscow, Russia

    M. A. Kononov

Authors
  1. G. S. Burkhanov
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  2. S. A. Lachenkov
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  3. M. A. Kononov
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Corresponding author

Correspondence to S. A. Lachenkov.

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Translated by D. Safin

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Burkhanov, G.S., Lachenkov, S.A. & Kononov, M.A. A Giant Increase in the Electrical Conductivity of the High-Resistivity Film MoS2 Semiconductor under Continuous Proton Injection. Dokl. Phys. 63, 279–281 (2018). https://doi.org/10.1134/S1028335818070054

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  • DOI: https://doi.org/10.1134/S1028335818070054

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