Abstract
Spin-wave structures with magnetic-field-driven current-voltage characteristics at room temperature were produced using a spintronic europium-monoxide-based thin-film emitter and a single-crystal n-GaAs semiconductor collector. This manifests practical implementation of the spin current transport and creation of a high-temperature spin transistor with the magnetic semiconductor/nonmagnetic semiconductor contact.
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Original Russian Text © V.G. Bamburov, A.S. Borukhovich, N.I. Igant’eva, 2011, published in Doklady Akademii Nauk, 2011, Vol. 437, No. 2, pp. 173–177.
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Bamburov, V.G., Borukhovich, A.S. & Igant’eva, N.I. Spin transistor in the EuO:Fe/GaAs contact. Dokl. Phys. 56, 141–144 (2011). https://doi.org/10.1134/S1028335811030062
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DOI: https://doi.org/10.1134/S1028335811030062