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Original Russian Text © A.É. Atamuratov, D. U. Matrasulov, P.K. Khabibullaev, 2010, published in Doklady Akademii Nauk, 2010, Vol. 430, No. 4, pp. 484–486.
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Atamuratov, A.É., Matrasulov, D.U. & Khabibullaev, P.K. Influence of the field of the built-in oxide charge on the lateral C- V dependence of the MOSFET. Dokl. Phys. 55, 52–54 (2010). https://doi.org/10.1134/S1028335810020023
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DOI: https://doi.org/10.1134/S1028335810020023