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Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement

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Authors and Affiliations

  1. Urgench State University, Urgench, 740000, Uzbekistan

    A. É. Atamuratov, D. U. Matrasulov & P. K. Khabibullaev (Corresponding Member of the RAS)

  2. Heat Physics Department, Academy of Sciences of Uzbekistan, Tashkent, 700135, Uzbekistan

    A. É. Atamuratov, D. U. Matrasulov & P. K. Khabibullaev (Corresponding Member of the RAS)

Authors
  1. A. É. Atamuratov
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  2. D. U. Matrasulov
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  3. P. K. Khabibullaev
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Original Russian Text © A.É. Atamuratov, D.U. Matrasulov, P.K. Khabibullaev, 2007, published in Doklady Akademii Nauk, 2007, Vol. 414, No. 6, pp. 761–764.

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Atamuratov, A.É., Matrasulov, D.U. & Khabibullaev, P.K. Detection of a charge built in the oxide layer of a metal-oxide-semiconductor field-effect transistor by lateral C-V measurement. Dokl. Phys. 52, 322–325 (2007). https://doi.org/10.1134/S1028335807060080

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  • DOI: https://doi.org/10.1134/S1028335807060080

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