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Composition of Silicon Alloyed with Gallium and Phosphorus Atoms

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Abstract

The morphology and surface composition of silicon are experimentally studied using scanning-electron microscopy, X-ray phase analysis, and Raman spectroscopy. The spectral characteristics of silicon doped with impurity atoms of phosphorus and gallium are investigated. In a silicon lattice doped simultaneously with gallium and phosphorus atoms, impurity atoms form binary complexes. Experimental determination of the concentration of impurity atoms of gallium and phosphorus reveals a significant increase in the concentration of gallium compared to its fundamental solubility in silicon. It is demonstrated that a rather high concentration of such elementary cells can lead to a substantial change in the electrical parameters of silicon, i.e., the possibility of obtaining a new material based on silicon.

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Funding

The research was carried out within the framework of scientific project-54 (fundamental project) 21 101 836.

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Authors and Affiliations

  1. Tashkent State Technical University, 100095, Tashkent, Uzbekistan

    N. F. Zikrillaev, S. V. Koveshnikov, X. S. Turekeev & B. K. Ismailov

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  1. N. F. Zikrillaev
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  2. S. V. Koveshnikov
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  3. X. S. Turekeev
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  4. B. K. Ismailov
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Correspondence to N. F. Zikrillaev or X. S. Turekeev.

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Translated by O. Zhukova

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Zikrillaev, N.F., Koveshnikov, S.V., Turekeev, X.S. et al. Composition of Silicon Alloyed with Gallium and Phosphorus Atoms. J. Surf. Investig. 18, 69–73 (2024). https://doi.org/10.1134/S102745102401021X

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  • DOI: https://doi.org/10.1134/S102745102401021X

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