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On the Prospects of Lithography in the Region of Wavelengths Shorter than 13.5 nm

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Abstract—

A brief historical overview of the development of projection lithography in the extreme ultraviolet (EUV) range at a wavelength of 13.5 nm is presented. Using an eleven-mirror X-ray optical system as an example, the efficiency of a source—X-ray optics system for wavelengths of 13.5 nm (Mo/Si multilayer mirrors, tin laser-plasma source), 11.2 nm (Ru/Be multilayer mirrors, xenon source), and 10.8 nm (multilayer mirrors Ru/Sr, xenon source) is compared. Calculation is carried out taking into account experimental data on the reflection coefficients of multilayer mirrors and the conversion efficiency of laser-plasma X-ray sources based on multiply charged Sn and Xe ions. The maximum reflection coefficients of multilayer mirrors achieved are: RMo/Si = 70.15%, RRu/Be = 72.2%, and RRu/Sr = 62.2%. The efficiency of conversion of laser-radiation energy into X-ray radiation based on Sn ions at a wavelength of 13.5 nm corrected for the actual transmission band of the X-ray optical system is taken equal to CE13.5 = 5.4%. The conversion efficiency of the source based on Xe ions is taken equal to: CE11.2 = 1.0% and CE10.8 = 1.6%. The calculated productivity of lithographs expressed in arbitrary units at various wavelengths is: LP13.5 = 0.1091, LP11.2 = 0.0278, and LP10.8 = 0.0089. Despite the lower productivity, due to significant simplification of the lithograph design and the lower cost of both the equipment and its operation, lithography at a wavelength of 11.2 nm has good prospects for practical application.

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Funding

The study was carried out with financial support of the Ministry of Science and Higher Education of the Russian Federation (agreement no. 075-15-2021-1350 dated October 5, 2021, internal number 15.SIN.21.0004).

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Authors and Affiliations

  1. Institute of Physics of Microstructures, Russian Academy of Sciences, 603950, Nizhny Novgorod, Russia

    N. I. Chkhalo, K. V. Durov, A. N. Nechay, A. A. Perekalov, V. N. Polkovnikov & N. N. Salashchenko

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  1. N. I. Chkhalo
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  2. K. V. Durov
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  3. A. N. Nechay
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  4. A. A. Perekalov
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Correspondence to N. I. Chkhalo.

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Translated by S. Rostovtseva

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Chkhalo, N.I., Durov, K.V., Nechay, A.N. et al. On the Prospects of Lithography in the Region of Wavelengths Shorter than 13.5 nm. J. Surf. Investig. 17 (Suppl 1), S226–S232 (2023). https://doi.org/10.1134/S1027451023070078

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