Abstract
In this paper, we calculate the nuclear stopping powers for the H, D, T–Be, C, W systems that are necessary for calculating the plasma-wall interaction in thermonuclear research, as well as for the Kr–Si, Kr–Ge, O–Si systems used for ion implantation in semiconductors using interaction potentials obtained in the framework of density-functional theory. In the range of collision energies of 10–1000 eV, the obtained data differ from the SRIM data by 15–70%. The presence of a potential well leads to the appearance of an additional peak in the dependence of the nuclear stopping cross section at low energies. A comparison of the classical calculations of the transport cross section with the semiclassical ones shows their identity at energies up to 0.3 eV.
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Babenko, P.Y., Zinoviev, A.N. Nuclear Stopping Powers for DFT Potentials with an Attractive Well. J. Surf. Investig. 17, 1267–1272 (2023). https://doi.org/10.1134/S1027451023060058
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DOI: https://doi.org/10.1134/S1027451023060058