Skip to main content
Log in

Effect of Neutron Irradiation on the Spectral Characteristics of InxGa1 – xN LEDs

  • Published:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques Aims and scope Submit manuscript

Abstract

The results of studying the effect of neutron irradiation on the spectral characteristics of InxGa1 – xN LEDs are presented. The mechanism responsible for the shift of the maximum of the LED emission spectra under the influence of neutrons is determined. Coherence is shown between the radiation sensitivity of the spectral characteristics of the sample active layers and the composition of the InxGa1 – xN solid solution. An analytical calculation is carried out to estimate the possible maximum shift of the luminescence spectrum of InxGa1 – xN LEDs after neutron exposure.

This is a preview of subscription content, log in via an institution to check access.

Access this article

Price excludes VAT (USA)
Tax calculation will be finalised during checkout.

Instant access to the full article PDF.

Fig. 1.
Fig. 2.
Fig. 3.
Fig. 4.
Fig. 5.
Fig. 6.
Fig. 7.

Similar content being viewed by others

REFERENCES

  1. D. M. J. Compton and R. A. Cesena, IEEE Trans. Nucl. Sci. 14, 55 (1967). https://doi.org/10.1109/TNS.1967.4324775

    Article  CAS  Google Scholar 

  2. R. A. Polimadei, S. Share, A. S. Epstein, R. J. Lynch, and D. Sullivan, IEEE Trans. Nucl. Sci. 21, 96 (1974). https://doi.org/10.1109/TNS.1974.6498911

    Article  Google Scholar 

  3. S. Hava and R. Lam, J. Appl. Phys. 59, 2229 (1986). https://doi.org/10.1063/1.336364

    Article  CAS  Google Scholar 

  4. J. C. Comparo, S. B. Delcamp, and R. P. Frueholz, J. Appl. Phys. 71, 5323 (1992). https://doi.org/10.1063/1.350548

    Article  Google Scholar 

  5. S. Hava, J. Appl. Phys. 91, 8 (2002). https://doi.org/10.1063/1.1419266

    Article  CAS  Google Scholar 

  6. N. V. Baidus, O. V. Vikhrova, B. N. Zvonkov, E. I. Malysheva, and A. N. Trufanov, Semiconductors 49, 358 (2015).

    Article  CAS  Google Scholar 

  7. O. V. Vikhrova, Yu. A. Danilov, B. N. Zvonkov, I. L. Kalentyeva, A. V. Nezhdanov, A. E. Parafin, D. V. Khomitskii, and I. N. Antonov, Semiconductors 54, 1598 (2020). https://doi.org/10.1134/S1063782620120428

    Article  CAS  Google Scholar 

  8. V. P. Shukailo, O. V. Tkachev, S. M. Dubrovskikh, N. V. Basargina, and I. V. Vorozhtsova, Vopr. At. Nauki Tekh., Ser.: Fiz. Radiats. Vozdeistv. Radioelektron. Appar., No. 4, 41 (2012).

  9. S. V. Obolenskii, V. P. Shukailo, O. V. Tkachev, S. M. Dubrovskikh, N. V. Basargina, and I. V. Vorozhtsova, Vestn. Nizhegorod. Gos. Univ., No. 6(1), 51 (2012).

  10. F. E. Schubert, Light-Emitting Diodes (Cambridge Univ. Press, Cambridge, 2006; Fizmatlit, Moscow, 2008).

  11. V. N. Brudnyi, V. M. Boiko, N. G. Kolin, A. V. Kosobutsky, A. V. Korulin, P. A. Brudnyi, and V. S. Ermakov, Semicond. Sci. Technol. 33, 095011 (2018). https://doi.org/10.1088/1361-6641/aad53b

    Article  CAS  Google Scholar 

  12. A. N. Johnston, IEEE Trans. Nucl. Sci. 50, 689 (2003). https://doi.org/10.1109/TNS.2003.812926

    Article  CAS  Google Scholar 

  13. V. I. Ryzhikov, Candidate’s Dissertation in Engineering (MIREA Univ., Moscow, 2004).

  14. I. P. Soshnikov, V. V. Lundin, A. S. Usikov, I. P. Kalmykova, N. N. Ledentsov, A. Rosenauer, B. Neubauer, and D. Gerthsen, Semiconductors 34, 621 (2000). https://doi.org/10.1002/pssc.200303129

    Article  CAS  Google Scholar 

  15. D. Gerthsen, E. Hahn, B. Neubauer, V. Potin, A. Rosenauer, M. Schowalter, Phys. Status Solidi C 0, 1668 (2003).

    Article  CAS  Google Scholar 

  16. V. E. Kudryashov, S. S. Mamakin, A. N. Turkin, A. E. Yunovich, A. N. Kovalev, and F. I. Manyakhin, Semiconductors 35, 827 (2001).

    Article  CAS  Google Scholar 

  17. E. V. Ershov, A. F. Ivanov, A. A. Naidin, O. A. Rogachkov, V. O. Permyakov, and E. V. Fomina, Yad. Fiz. Inzh. 4, 14 (2013). https://doi.org/10.1134/S207956291301003X

    Article  Google Scholar 

  18. A. F. Tsatsulnikov, V. V. Lundin, A. V. Sakharov, E. E. Zavarin, S. O. Usov, A. E. Nikolaev, M. A. Sinitsyn, N. A. Cherkashin, and S. Yu. Karpov, Semiconductors 49, 1516 (2015). https://doi.org/10.1134/S1063782615110238

    Article  CAS  Google Scholar 

  19. N. I. Bochkareva and Yu. G. Shreter, Semiconductors 52, 934 (2018). https://doi.org/10.1134/S1063782618070035

    Article  CAS  Google Scholar 

  20. R. A. Zinov’ev, Candidate’s Dissertation in Mathematics and Physics (MISiS Univ., Moscow, 2020).

Download references

Author information

Authors and Affiliations

Authors

Corresponding author

Correspondence to S. M. Dubrovskikh.

Ethics declarations

The authors declare that they have no conflicts of interest.

Additional information

Translated by Yu. Ryzhkov

Rights and permissions

Reprints and permissions

About this article

Check for updates. Verify currency and authenticity via CrossMark

Cite this article

Tkachev, O.V., Dubrovskikh, S.M., Koksharova, K.D. et al. Effect of Neutron Irradiation on the Spectral Characteristics of InxGa1 – xN LEDs. J. Surf. Investig. 17, 1034–1039 (2023). https://doi.org/10.1134/S1027451023020374

Download citation

  • Received:

  • Revised:

  • Accepted:

  • Published:

  • Issue Date:

  • DOI: https://doi.org/10.1134/S1027451023020374

Keywords:

Navigation