Effects of the Resonant Scattering of Channeled Particles with the Generation of Electron and Phonon Excitations

Abstract

The effects of the resonant scattering of fast relativistic leptons directed at small angles relative to a selected crystallographic plane are considered. Simultaneously, the processes of radiation and the generation of excitations in crystals by a collimated beam of channeled leptons entering a single crystal at small angles (both greater and less than the Lindhard angle ${{\theta }_{{\text{L}}}}$) are considered from a unified point of view. The processes of the Raman scattering of a monochromatic electromagnetic wave by channeled relativistic leptons (electrons, positrons), which experience the effect of resonant scattering at a small angle of entry relative to a selected crystallographic plane are theoretically studied, as well as the processes of Raman scattering by the relaxing deeply nonequilibrium electron-phonon system of the semiconductor, excited by a relativistic beam of charged leptons of subnanosecond duration directed at a small angle $\left( {\theta < {{\theta }_{{\text{L}}}}} \right)$ to the crystallographic plane.