Abstract
The dark current–voltage characteristics of a p–n structure created on the surface of an n-type GaAs wafer by Ar+ ions with the energy Ei = 2500 eV are studied. To avoid the metallization of a thin (~10 nm) ion-modified p-type layer, multilayer metal contacts are deposited onto both sides of the plate without subsequent annealing. The diode effect with a forward-to-reverse current ratio up to three orders of magnitude is observed in the voltage range as high as 0.7 eV contrary to the unirradiated reference sample. The linear dependence of most current–voltage characteristics of the unirradiated reference sample and coincidence of the experimental current–voltage characteristics with the calculated ones for the ion-induced p–n-structure indicate the predominantly ohmic nature of the metallic contacts and that the observed diode effect is determined by the ion-induced p–n structure. An analysis of two regions with different slopes in the current–voltage characteristics reveals two current-transport mechanisms: recombination and diffusion. The considered effect of the ion-induced formation of the p–n structure limits the use of low-energy argon ions for preparing an atomically clean surface of n-type GaAs-based semiconductors for their study by surface-sensitive methods because the p–n structure is formed on the surface instead of a homogeneous material.
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REFERENCES
A. W. Czanderna and C. Lu, Methods Phenom. 7, 1 (1984). https://www.doi.org/10.1016/B978-0-444-42277-4.50007-7
R. Nix, Surface Science, Chapter 5: Surface Analytical Techniques (Univ. London, London, 2021).
D. Briggs and M. P. Seah, Practical Surface Analysis by Auger and X-Ray Photoelectron Spectroscopy (Wiley, New York, 1983). https://www.doi.org/10.1002/sia.74006061 1
C. D. Wagner, W. M. Riggs, L. E. Davis, and J. F. Moulder, Handbook of X-Ray Photoelectron Spectroscopy (Perking-Elmer, Eden Prairie, 1979). https://www.doi.org/org/10.1002/sia.740030412
A. G. Baca and C. I. H. Ashby, Fabrication of GaAs devices (IET, London, 2005). https://www.doi.org/10.1049/PBEP006E
V. M. Mikoushkin, V. V. Bryzgalov, S. Yu. Nikonov, A. P. Solonitsyna, and D. E. Marchenko, Europhys. Lett. 122, 27002 (2018). https://www.doi.org/10.1209/0295-5075/122/27002
V. M. Mikoushkin, E. A. Makarevskaya, and M. Brzhezinskaya, Appl. Surf. Sci. 539, 148273 (2021). https://www.doi.org/10.1016/j.apsusc.2020.148273
H. Y. Cho, E. K. Kim, S. Min, J. B. Kim, and J. Jang, Appl. Phys. Lett. 53, 856 (1998). https://www.doi.org/10.1063/1.100094
A. W. R. Leitch, Th. Prescha, and J. Weber, Phys. Rev. B 45, 14400 (1992). https://www.doi.org/10.1103/PhysRevB.45.1440
F. D. Auret, W. E. Meyer, P. N. K. Deenapanray, S. A. Goodman, G. Myburg, M. Murtagh, Ye Shu-Ren, and G. M. Crean, J. Appl. Phys. 84, 1973 (1998). https://www.doi.org/10.1063/1.368329
A. Venter, C. Nyamhere, J. R. Botha, and F. D. Auret, J. Appl. Phys. 111, 013703 (2012). https://www.doi.org/10.1063/1.3673322
F. D. Auret, S. A. Goodman, G. Myburg, and W. E. Meyer, Appl. Phys. A: Solids Surf. 56, 547 (1993). https://www.doi.org/10.1007/BF00331403
P. Jayavel, J. Kumar, K. Santhakumar, P. Magudapathy, and K. G. M. Nair, Vacuum 57, 51 (2000). https://www.doi.org/10.1016/S0042-207X(99)00211-0
B. Ziebro, J. W. Hemsky, and D. C. Look, J. Appl. Phys. 72, 78 (1992). https://www.doi.org/10.1063/1.352098
D. Pons and J. C. Bourgoin, J. Phys. C 18, 3839 (1985). https://www.doi.org/10.1088/0022-3719/18/20/012
F. D. Auret, L. J. Bredell, G. Myburg, and W. O. Barnard, Jpn. J. Appl. Phys. 30, 80 (1991).
S. A. Goodman, F. D. Auret, and W. E. Meyer, Nucl. Instrum. Methods Phys. Res., Sect. B 90, 349 (1994). https://www.doi.org/10.1016/0168-583X(94)95569-7
F. Zhan, J. Hu, Y. Zhang, and F. Lu, Appl. Surf. Sci. 255, 8257 (2009). https://www.doi.org/10.1016/j.apsusc.2009.05.092
V. M. Mikoushkin, V. S. Kalinovskii, E. V. Kontrosh, and E. A. Makarevskaya, Semiconductors 53, 1922 (2019). https://www.doi.org/10.1134/S1063782619140136
A. Galal, Silvaco Atlas User’s Manual Device Simulation Software (Sivalco, Santa Clara, 2016). https://ridl.cfd.rit.edu/products/Manuals/Silvaco/atlas_users.pdf
A. V. Malevskaya, V. S. Kalinovskii, N. D. Il’inskaya, D. A. Malevskii, E. V. Kontrosh, M. Z. Shvarts, and V. M. Andreev, Tech. Phys. 63, 1177 (2018). https://doi.org/10.1134/S106378421808011X
C. C. Surdu-Bob, S. O. Saied, and J. L. Sullivan, Appl. Surf. Sci. 183, 126 (2021). https://www.doi.org/10.1117/12.2033679
L. Feng, L. Zhang, H. Liu, X. Gao, Z. Miao, H . C. Cheng, L. Wang, and S. Niu, Proc. SPIE 8912, 89120N (2013). https://www.doi.org/10.1117/12.2033679
V. M. Mikoushkin, V. V. Bryzgalov, E. A. Makarevskaya, A. P. Solonitsyna, and D. E. Marchenko, Semiconductors 52, 2057 (2018). https://www.doi.org/10.1134/S1063782618160194
W. Shockley and W. T. Read, Phys. Rev. 87, 835 (1952). https://www.doi.org/10.1103/PhysRev.87.835
R. N. Hall, Phys. Rev. 87, 387 (1952). https://www.doi.org/10.1103/PhysRev.88.139
J. W. Slotboom and H. C. de Graaf, Solid State Electron. 19, 857 (1976). https://www.doi.org/10.1016/0038-1101(76)90043-5
R. I. I. Kilway, Five-Junction Solar Cell Optimization Using Silvaco ATLAS (Naval Postgrad. School, Monterey, 2017).
J. F. Ziegler and J. M. Manoyan, Phys. Res. B 35, 215 (1998). https://www.doi.org/10.1016/0168-583X(88)90273-X
V. M. Mikoushkin, E. A. Makarevskaya, A. P. Solonitsyna, and M. Brzhezinskaya, Semiconductors 54, 1702 (2020). https://www.doi.org/10.1134/S1063782620120222
S. M. Sze, Physics of Semiconductor Devices (Wiley, New York, 1981). https://www.doi.org/10.1002/0470068329
V. M. Andreev, V. V. Evstropov, V. S. Kalinovskii, V. M. Lantratov, and V. P. Khvostikov, Semiconductors 41, 732 (2007).
C. T. Sah, R. N. Noyce, and W. Shockley, Proc. IRE 45, 1228 (1957). https://www.doi.org/10.1109/JRPROC.1957.278528
W. Shockley, Bell Syst. Tech. J. 28, 435 (1949).
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The work was supported by the Russian Science Foundation (project no. 17-19-01200-P).
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Translated by L. Chernikova
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Makarevskaya, E.A., Novikov, D.A., Mikoushkin, V.M. et al. p–n Structure Formed on the Surface of n-type GaAs by Low-Energy Ar+ Ions. J. Surf. Investig. 16, 890–895 (2022). https://doi.org/10.1134/S1027451022050329
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DOI: https://doi.org/10.1134/S1027451022050329