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Effect of the Content of Silicon on the Optical Properties of Al–Si–N Coatings Irradiated with Carbon Ions in the Short-Pulse Implantation Mode

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Abstract

The effect of short-pulse irradiation with 200-keV carbon ions on the optical and electrical properties of aluminum-nitride films and Al–Si–N coatings with variable atomic composition deposited by reactive magnetron sputtering on a silicon substrate is investigated. Absorption and luminescence centers are associated with growth and radiation-induced defects in nitrides and their simplest complexes. A change in the properties during irradiation occurs due to the accumulation of radiation defects and their association into complexes. Ion irradiation is accompanied by intense radiation and the thermal annealing of unstable defects. The dose dependences of the coating characteristics indicate their high radiation resistance, which are slightly inferior to coatings on steel substrates. The radiation resistance of the coatings is due to the limiting effect of growth defects on defect formation, the wide band gap of nitrides and the interaction of defects.

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Funding

This work was carried out in the framework of the state task in scientific activity area no. FSWW-2020-0008; sample irradiation was supported by the Russian Foundation for Basic Research and State Corporation ROSATOM, project no. 20-21-00025.

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Authors and Affiliations

  1. National Research Tomsk Polytechnic University, 634050, Tomsk, Russia

    F. V. Konusov, S. K. Pavlov, A. L. Lauk, V. A. Tarbokov & G. E. Remnev

  2. Tomsk State University, 634050, Tomsk, Russia

    R. M. Gadirov

Authors
  1. F. V. Konusov
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  2. S. K. Pavlov
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  3. A. L. Lauk
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  4. V. A. Tarbokov
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  5. G. E. Remnev
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  6. R. M. Gadirov
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Correspondence to F. V. Konusov or S. K. Pavlov.

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Translated by Yu. Ryzhkov

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Konusov, F.V., Pavlov, S.K., Lauk, A.L. et al. Effect of the Content of Silicon on the Optical Properties of Al–Si–N Coatings Irradiated with Carbon Ions in the Short-Pulse Implantation Mode. J. Surf. Investig. 16, 702–711 (2022). https://doi.org/10.1134/S1027451022050081

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