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Thin Ion-Synthesized Silicate Layers in Silicon-On-Insulator Technology

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Abstract

A review of modifications of the method of ion synthesis of silicon-on-insulator structures is presented. A new approach based on the formation of a buried silicate insulating layer instead of an oxide one is proposed. This method involves the sequential implantation of oxygen ions and a glass former into silicon substrates. Boron and lead ions are tested in this capacity. Using the methods of secondary-ion mass spectrometry and Auger analysis, the features of the formation of buried silicate layers during post-implantation annealing are considered. The current—voltage characteristics of the synthesized structures, as well as the specific electrical resistivity of boron- and lead-silicate insulating layers, are measured.

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ACKNOWLEDGMENTS

The analytical equipment of the Center for Collective Use “Diagnostics of Microstructures and Nanostructures” was used in the study.

Funding

The work was carried out within the framework of the State task of the Ministry of Education and Science of the Russian Federation to the K.A. Valiev Physical-Technological Institute, Russian Academy of Sciences, on topic no. FFNN-2022-0018.

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Authors and Affiliations

  1. Yaroslavl Branch of the Valiev Institute of Physics and Technology, Russian Academy of Sciences, 150007, Yaroslavl, Russia

    E. Yu. Buchin & Yu. I. Denisenko

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  1. E. Yu. Buchin
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  2. Yu. I. Denisenko
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Correspondence to E. Yu. Buchin.

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Buchin, E.Y., Denisenko, Y.I. Thin Ion-Synthesized Silicate Layers in Silicon-On-Insulator Technology. J. Surf. Investig. 16, 764–769 (2022). https://doi.org/10.1134/S1027451022050032

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  • DOI: https://doi.org/10.1134/S1027451022050032

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