Abstract
The possibility of manufacturing semiconductor heterostructures based on III–V compounds for photovoltaic converters by diffusion methods is investigated. In a semiconductor wafer of the AB compound, a near-surface nanoscale layer of AB1 – xCx solid solution is formed due to the solid-phase substitution reactions of B atoms with C atoms supplied to the surface of the wafer in vapor form at 480–580°C for GaSb wafers and 670°C for GaAs wafers. The source of the C-element vapor were saturated solution melts based on Ga or In, or unsaturated Sn-based solution melts. The possibility of forming a p–n junction due to Zn diffusion into the n-type AB wafer simultaneously with the formation of an AB1 – xCx near-surface layer is investigated. The positive effect of GaSb1 – xAsx and GaSb1 – xPx near-surface layers on the luminescence characteristics of GaSb-based structures with simultaneous zinc diffusion is shown.
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ACKNOWLEDGMENTS
Diagnostic studies were performed using facilities of the Center of Joint Use “Materials Science and Diagnostics in Advanced Technologies” (Ioffe Institute).
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The work was supported by the Ministry of Science and Higher Education (unique project identifier RFMEFI62119X0021).
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Translated by L. Chernikova
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Vasil’ev, V.I., Gagis, G.S. & Kuchinskii, V.I. Formation of the Near-Surface Layer of a Triple Solid Solution in Wafers of Binary Compounds of Groups III–V due to Solid-Phase Substitution Reactions. J. Surf. Investig. 16, 333–337 (2022). https://doi.org/10.1134/S1027451022030338
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DOI: https://doi.org/10.1134/S1027451022030338