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Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films

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Abstract

The formation of films of barium monosilicide BaSi and dicilicide BaSi2 on an n-Si(100) substrate of different thicknesses d = 8–800 nm during the low-energy high-dose implantation of barium ions in Si(100) and magnetron sputtering of bulk samples of barium silicides is studied by electron spectroscopy and low-energy electron diffraction. The optimal modes of the formation and band-energy parameters of BaSi and BaSi2 films on n-Si(100) are determined.

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Authors and Affiliations

  1. Karshi State University, 180103, Karshi, Uzbekistan

    M. T. Normurodov & D. A. Normurodov

  2. Tashkent State Technical University named after I.A. Karimov, 100095, Tashkent, Uzbekistan

    A. S. Rysbaev & I. R. Bekpulatov

  3. Research Institute of Semiconductor Physics and Microelectronics at the National University named after Mirzo Ulugbek, 100057, Tashkent, Uzbekistan

    Z. A. Tursunmetova

Authors
  1. M. T. Normurodov
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  2. A. S. Rysbaev
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  3. I. R. Bekpulatov
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  4. D. A. Normurodov
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  5. Z. A. Tursunmetova
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Correspondence to I. R. Bekpulatov.

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Normurodov, M.T., Rysbaev, A.S., Bekpulatov, I.R. et al. Formation and Electronic Structure of Barium-Monosilicide- and Barium-Disilicide Films. J. Surf. Investig. 15 (Suppl 1), S211–S215 (2021). https://doi.org/10.1134/S1027451022020318

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  • DOI: https://doi.org/10.1134/S1027451022020318

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