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Investigation of the Features of InAs/GaAs Structures with Quantum Dots by Information-Correlation Characteristics

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Abstract

The paper presents a technique for calculating information-correlation characteristics based on the methods of average mutual information and two-dimensional detrended fluctuation analysis. The experimental samples are structures with an array of self-organized InAs/GaAs quantum dots grown without a cover layer by gas-phase epitaxy from metalorganic compounds. The microstructure of the sample surfaces is studied by scanning electron microscopy. The information-correlation characteristics of InAs/GaAs structures with quantum dots are obtained using two-dimensional detrended fluctuation analysis and average mutual information. The order of the array of quantum dots in the InAs/GaAs structure is estimated depending on the applied technological modes of production. It is found that increasing the growth temperature of the experimental samples from 480 to 520°C increases the ordering of the location of quantum dots on the surface.

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REFERENCES

  1. Self-Assembled Quantum Dots, Ed. by Z. M. Wang, Ser.: Lecture Notes in Nanoscale Science and Technology (Springer, New York, 2008), Vol. 1.

  2. V. V. Strel’chuk, P. M. Lytvyn, A. F. Kolomys, et al., Semiconductors 41, 73 (2007).

    Article  Google Scholar 

  3. V. A. Sevriuk, P. N. Brunkov, I. V. Shalnev, et al., Semiconductors 47, 930 (2013).

    Article  CAS  Google Scholar 

  4. A. V. Alpatov, S. P. Vikhrov, and N. V. Rybina, Semiconductors 49, 456 (2015). https://doi.org/10.1134/S106378261504003X

    Article  CAS  Google Scholar 

  5. A. V. Alpatov, S. P. Vikhrov, N. V. Vishnyakov, et al., Semiconductors 50, 22 (2016). https://doi.org/10.1134/S1063782616010048

    Article  CAS  Google Scholar 

  6. A. V. Alpatov, S. P. Vikhrov, N. V. Grishankina, and S. M. Mursalov, Vestn. Ryazan. Gos. Radiotekh. Univ., No. 4 (2), 12 (2012).

  7. A. V. Alpatov, S. P. Vikhrov, and N. V. Grishankina, Semiconductors 47, 365 (2013). https://doi.org/10.1134/S1063782613030020

    Article  CAS  Google Scholar 

  8. A. V. Alpatov, S. P. Vikhrov, A. G. Kazanskii, et al., Semiconductors 50, 590 (2016). https://doi.org/10.1134/S1063782616050031

    Article  CAS  Google Scholar 

  9. A. E. Lunyakov, N. V. Rybina, and N. B. Rybin, Vestn. Ryazan. Gos. Radiotekh. Univ., No. 4, 153 (2016).

  10. S. P. Vikhrov, N. V. Rybina, N. V. Bodyagin, et al., in Proceedings of International Conference “Amorphous and Microcrystalline Semiconductors” (St. Petersburg, 2018), p. 191.

  11. A. V. Zdoroveishchev, P. B. Demina, and B. N. Zvonkov, Tech. Phys. Lett. 35, 60 (2009).

    Article  CAS  Google Scholar 

  12. S. P. Vikhrov, N. V. Rybina, N. V. Bodyagin, et al., Self-Organizing Structures in Electronics (Zhukov, Ryazan, 2017) [in Russian].

    Google Scholar 

  13. Rybina N. V., Vikhrov S. P., and N. B. Rybin, Vestn. Ryazan. Gos. Radiotekh. Univ., No. 61, 143 (2017).

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ACKNOWLEDGMENTS

The work was carried out using equipment of the Regional Center for Probe Microscopy for Collective Use at Ryazan State Radio Engineering University.

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Authors and Affiliations

  1. Ryazan State Radio Engineering University, 390005, Ryazan, Russia

    N. V. Rybina & N. B. Rybin

  2. Nizhny Novgorod State University, 603950, Nizhny Novgorod, Russia

    A. V. Zdoroveyschev

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  1. N. V. Rybina
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  2. A. V. Zdoroveyschev
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  3. N. B. Rybin
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Correspondence to N. V. Rybina or N. B. Rybin.

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Rybina, N.V., Zdoroveyschev, A.V. & Rybin, N.B. Investigation of the Features of InAs/GaAs Structures with Quantum Dots by Information-Correlation Characteristics. J. Surf. Investig. 15, 384–388 (2021). https://doi.org/10.1134/S1027451021020312

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  • DOI: https://doi.org/10.1134/S1027451021020312

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