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Channeling of Charged Particles Near the Surface of Semiconductors and Conducting Crystals

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Abstract—

The features of the orientational motion and channeling of charged particles are considered. They move in a near-surface potential well whose structure is formed by the surface plane of a crystal and by the action of the vector potential of the electric current flowing through a crystal or along a conductor, near which a nonconducting crystal is located. The width of the potential well forming the near-surface channeling mode depends on the crystal thickness and the electric current density and can vary in the range from several millimeters to a few micrometers as the current density varies in the range of 1–1000 A/cm2. The process of near-surface channeling in the field of a plane conductor with current provides the abnormally weak deceleration of particles and can be used to transport particle beams along conductors with current over large distances. A similar axial channeling mode is characterized by the complete suppression of the scattering and deceleration of ion beams during their motion in free space along the surface of a cylindrical conductor with current.

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Authors and Affiliations

  1. Taras Shevchenko National University of Kyiv, 01033, Kyiv, Ukraine

    V. I. Vysotskii, M. V. Vysotskyy & N. V. Maksyuta

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  1. V. I. Vysotskii
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  2. M. V. Vysotskyy
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  3. N. V. Maksyuta
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Correspondence to V. I. Vysotskii.

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Translated by L. Kulman

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Vysotskii, V.I., Vysotskyy, M.V. & Maksyuta, N.V. Channeling of Charged Particles Near the Surface of Semiconductors and Conducting Crystals. J. Surf. Investig. 15, 302–308 (2021). https://doi.org/10.1134/S1027451021020178

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  • DOI: https://doi.org/10.1134/S1027451021020178

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