Abstract
This work is devoted to studying the effect of the conditions of the formation of CaF2F2/(Si + CaF2)/CaF2/Si(111) structures on their emissivity in the visible region of the spectrum. Multilayer CaF2/(Si + CaF2)/CaF2/Si(111) heterostructures are grown on Si(111) substrates by molecular-beam epitaxy in a closed technological cycle. Photoluminescence is excited by a He–Cd laser with an emission wavelength of 325 nm. The spectra are measured at room temperature. The parameters of the technological process are selected to obtain structures capable of emitting in the visible range of the spectrum. It is found experimentally that luminescence in the CaF2/(Si + CaF2)/CaF2/Si(111) structures is observed only at a ratio of Si and CaF2 fluxes of 3.6–4.0. A 1.5-fold decrease in the growth rates of Si and CaF2 layers, as well as a decrease in the thickness of the CaF2 separation layers to 1 nm, does not affect the position of the maxima in the photoluminescence spectra. A change in the annealing mode of the CaF2/(Si + CaF2)/CaF2/Si(111) structures shifts the maximum in the photoluminescence spectra. Estimation of the sizes of silicon nanocrystals corresponding to the energies observed during photoluminescence correlates well with the experimental data of high-resolution transmission electron microscopy and photoluminescence.
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REFERENCES
L. T. Canham, Appl. Phys. Lett. 57, 1046 (1990). https://doi.org/10.1063/1.103561
G. C. John and V. A. Singh, Phys. Rev. B: Condens. Matter Mater. Phys. 50, 5329 (1994). https://doi.org/10.1103/PhysRevB.50.5329
N. V. Latukhina, D. A. Lizunkova, G. A. Rogozhina, et al., Fotonika 12, 508 (2018). https://doi.org/10.22184/1993-7296.2018.12.5.508.513
G. Franzo, F. Priolo, S. Coffia, et al., Appl. Phys. Lett. 64, 2235 (1994). https://doi.org/10.1063/1.111655
A. M. Emelyanov, N. A. Sobolev, and A. N. Yakimenko, Appl. Phys. Lett. 72, 1223 (1998). https://doi.org/10.1063/1.121020
V. Kveder, V. Badylevich, E. Steinman, et al., Appl. Phys. Lett. 84, 2106 (2004). https://doi.org/10.1063/1.1689402
A. A. Shklyaev, A. V. Latyshev, and M. Ichikava, Semiconductors 44, 423 (2010).
N. A. Sobolev, A. E. Kalyadin, E. I. Shek, and K. F. Shtel’makh, Semiconductors 51, 1133 (2017). https://doi.org/10.1134/S1063782617090202
N. A. Sobolev, A. E. Kalyadin, M. V. Konovalov, et al., Phys. Solid State 58, 2499 (2016). https://doi.org/10.1134/S1063783416120283
A. E. Kalyadin, K. F. Shtel’makh, P. N. Aruev, et al., Semiconductors 54, 687 (2020). https://doi.org/10.1134/S1063782620060081
N. A. Sobolev, A. E. Kalyadin, V. I. Sakharov, et al., Tech. Phys. Lett. 43, 50 (2017). https://doi.org/10.1134/S1063785017010126
L. A. Vlasukova, F. F. Komarov, I. N. Parkhomenko, et al., “Luminescence of ion-implanted silicon in the IR range: Luminescence from a dislocation and A3B5 nanocrystals,” in Proceedings of the 12th Int. Conf. on Interaction of Radiation with a Solid (Minsk, 2017), p. 219.
S. N. Nagornykh, V. I. Pavlenkov, D. I. Tetel’baum, et al., Izv. Vyssh. Uchebn. Zaved., Mater. Elektron. Tekh. 17, 252 (2014). https://doi.org/10.17073/1609 3577 -2014-4-252-256
V. Kveder, E. A. Steinman, S. A. Shevchenko, and H. G. Grimmeiss, Phys. Rev. B: Condens. Matter Mater. Phys. 51, 10520 (1995). https://doi.org/10.1103/PhysRevB.51.10520
L. Pavesi, L. Dal Negro, C. Mazzoleni, et al., Nature 408, 440 (2000). https://doi.org/10.1038/35044012
O. Boyraz and B. Jalali, Opt. Express 12, 5269 (2004). https://doi.org/10.1364/OPEX.12.005269
T. Z. Lu, M. Alexe, R. Scholz, et al., J. Appl. Phys. 100, 01431 (2006). https://doi.org/10.1063/1.2214300
C. Y. Ng, T. P. Chen, L. Ding, et al., Appl. Phys. Lett. 88, 063103 (2006). https://doi.org/10.1063/1.2172009
Qi. Zhang, S. C. Bayliss, and D. A. Hutt, Appl. Phys. Lett. 66, 1977 (1995). https://doi.org/10.1063/1.113296
V. Ioannou-Sougleridis, B. Kamenev, D. N. Kouvatsos, and A. G. Nassiopoulou, Mater. Sci. Eng. 101, 324 (2003). https://doi.org/10.1016/S0921-5107(02)00733-X
V. A. Terekhov, E. I. Terukov, Yu. K. Undalov, and E. V. Parinova, 50, 212 (2016). https://doi.org/10.1134/S1063782616020251
I. G. Neizvestnyi, V. A. Volodin, G. N. Kamaev, et al., Avtometriya 52, 84 (2016). https://doi.org/10.15372/AUT20160510
M. Watanabe, T. Matsunuma, T. Maruyama, and Y. Maeda, Jpn. J. Appl. Phys. 37, 591 (1998). https://doi.org/10.1143/JJAP.37. L591
T. Maruyama, N. Nakamura, and M. Watanabe, Jpn. J. Appl. Phys. 39, 1996 (2000). https://doi.org/10.1143/JJAP.39.1996
T. Maruyama, N. Nakamura, and M. Watanabe, Jpn. J. Appl. Phys. 38, L904 (1999). https://doi.org/10.1143/JJAP.38.L904
A. A. Velichko, V. A. Ilyushin, A. Yu. Krupin, et al., J. Surf. Invest.: X-Ray, Synchrotron Neutron Tech. 10, 912 (2016). https://doi.org/10.1134/S1027451016050165
A. N. Mihailov, A. I. Belov, M. O. Marychev, et al., Physical Foundations of Ion-Beam Formation and Properties of Silicon Quantum Dots in a Dielectric (Educational-Methodical Complex) (Nizhegor. Gos. Univ., Nizhny Novgorod, 2010) [in Russian]. http://www.unn.ru/pages/e-library/methodmaterial/ 2010/32.pdf.
V. Ioannou-Sougleridis, T. Ouissse, A. G. Nassiopoulou, et al., J. Appl. Phys. 89, 610 (2001). https://doi.org/10.1063/1.1330551
F. Bassani and S. Menard, Phys. Status Solidi 165 (49), 49 (1998). https://doi.org/10.1002/(SICI)1521-396X(199801)165:1<49::AID-PSSA49>3.0.CO;2-L
V. Ioannou-Sougleridis, A. G. Nassiopoulou, T. Ouisse, and F. Bassani, Appl. Phys. Lett. 79, 2076 (2001). https://doi.org/10.1063/1.1405004
V. A. Burdov, Semiconductors 36, 1154 (2002).
A. V. Belolipetskiy, M. O. Nestoklon, and I. N. Yassievich, Semiconductors 52, 1264 (2018). https://doi.org/10.1134/S1063782618100020
A. A. Velichko, A. Yu. Krupin, and V. A. Gavrilenko, RF Patent No. 2642132, Byull. Izobret., No. 3 (2018).
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Velichko, A.A., Krupin, A.Y., Filimonova, N.I. et al. Effect of the Growth Modes of CaF2/(Si + CaF2)/CaF2/Si(111) Heterostructures on Their Photoluminescence Spectrum. J. Surf. Investig. 15, 424–429 (2021). https://doi.org/10.1134/S1027451021020166
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DOI: https://doi.org/10.1134/S1027451021020166