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Transport of Secondary Ions—Products of the Inelastic Interaction of Protons with Integrated-Circuit Materials

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Abstract

A model based on depositing charge in the sensitive volume of an integrated circuit is used to estimate the probability of single event upset as a result of the interaction of single proton with the circuit materials. Calculations of the number of electron—hole pairs produced by the primary proton and secondary ions as a result of inelastic collision with the nucleus in the sensitive volume and surround materials make it possible to estimate the ratio of the contributions of these sources to the deposited charge.

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Authors and Affiliations

  1. Moscow State University, Skobeltsyn Institute of Nuclear Physics, 119991, Moscow, Russia

    N. V. Novikov, N. G. Chechenin & A. A. Shirokova

Authors
  1. N. V. Novikov
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  2. N. G. Chechenin
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  3. A. A. Shirokova
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Correspondence to N. V. Novikov.

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Translated by L. Kulman

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Novikov, N.V., Chechenin, N.G. & Shirokova, A.A. Transport of Secondary Ions—Products of the Inelastic Interaction of Protons with Integrated-Circuit Materials. J. Surf. Investig. 15, 236–242 (2021). https://doi.org/10.1134/S1027451021020117

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  • DOI: https://doi.org/10.1134/S1027451021020117

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