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On the Atomic-Force Microscopy and Electrical Properties of Single-Crystal Bismuth Films

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Abstract—A method for creating single-crystal bismuth films by melting and subsequent normal directed crystallization without a seed under a protective coating in a nitrogen atmosphere is proposed and tested. The high quality of the crystal structure of these films is confirmed by atomic-force microscopy and X-ray diffraction analysis. The specific resistance, magnetoresistance, and Hall coefficient are measured in the temperature range of 77–300 K. The electrical and galvanomagnetic coefficients of single-crystal bismuth films are compared with similar coefficients for block bismuth films created by thermal evaporation in vacuum. The mobilities of electrons and holes are determined in the temperature range 77–300 K for the studied structures.

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FUNDING

The study was financially supported by the Russian Foundation for Basic Research, project no. 18-32-00242.

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Authors and Affiliations

  1. Herzen State Pedagogical University of Russia, 191186, St. Petersburg, Russia

    V. M. Grabov, V. A. Gerega, E. V. Demidov, V. A. Komarov, A. V. Suslov & M. V. Suslov

  2. National Research Center “Kurchatov Institute”–Prometey–Central Scientific Research Institute of Structural Materials, 191015, St. Petersburg, Russia

    M. V. Starytsin

Authors
  1. V. M. Grabov
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  2. V. A. Gerega
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  3. E. V. Demidov
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  4. V. A. Komarov
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  5. M. V. Starytsin
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  6. A. V. Suslov
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  7. M. V. Suslov
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Correspondence to E. V. Demidov.

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Grabov, V.M., Gerega, V.A., Demidov, E.V. et al. On the Atomic-Force Microscopy and Electrical Properties of Single-Crystal Bismuth Films. J. Surf. Investig. 14, 913–917 (2020). https://doi.org/10.1134/S1027451020050055

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  • DOI: https://doi.org/10.1134/S1027451020050055

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