Atоmiс Force Microscopy of Graphene-Like Films Deposited onto Preirradiated SiO₂/Si

Abstract

The electron-beam exposure of dielectrics is actively explored in various fields of science. Recently, we have shown the possibility of the selective growth of graphene-like films on oxidized silicon due to an increase in the growth rate of a carbon film on exposed areas. Since the mechanism of the detected phenomenon is unclear, its study is a difficult scientific challenge. In this paper, the potential of atomic-force microscopy as a key instrument for characterization of these films is demonstrated. In particular, the point contact method provides grounds for interpreting processes occurring on the surface in the case of alternating synthesis and exposure to different irradiation doses. This method allows surface topography data and other characteristics (“adhesion” and “gradient” modes) to be obtained in one scan pass. The surface of the graphene-like films is scanned before and after exposure by means of atomic-force microscopy. Analysis of the data obtained shows that the “adhesion” mode enables special features of the samples that are either difficult or impossible to identify in a topographic image to be revealed. The study demonstrates the possibility of obtaining valuable information using cantilever-needle interaction with the surface to measure additional parameters.