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Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV

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Abstract

The peculiarities of the surface topography that arise as a result of the sputtering of Si single-crystal substrates of different orientations with sputtered thin films under irradiation with Ar+ and He+ ion beams with energies in a broad energy range are considered. It is shown that the modified-layer thickness depends significantly on the irradiation dose. The best surface homogeneity of a Si single crystal with different orientations can be reached under simultaneous irradiation with Ar+ and He+ ions in a ratio that is close to 1 : 1.

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Authors and Affiliations

  1. National Research Nuclear University “MEPhI”, 115409, Moscow, Russia

    N. V. Volkov & D. A. Safonov

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  1. N. V. Volkov
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  2. D. A. Safonov
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Correspondence to N. V. Volkov.

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Translated by L. Kulman

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Volkov, N.V., Safonov, D.A. Sputtering of Silicon Single Crystals under Irradiation with a Helium and Argon Ion Beam with an Average Energy of 1 keV. J. Surf. Investig. 13, 199–201 (2019). https://doi.org/10.1134/S1027451019020204

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  • DOI: https://doi.org/10.1134/S1027451019020204

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