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Study of the Processes of Mesoporous-Silicon Carbonization

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Abstract

Experimental and theoretical studies of the processes of mesoporous-silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-gap semiconductors are performed. Analytical expressions for the effective diffusion factor and diffusion length of carbon atoms in a porous system are obtained. The proposed model takes into account the processes of Knudsen diffusion, coagulation and the overgrowth of pores during the formation of a silicon-carbide layer.

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ACKNOWLEDGMENTS

The work was performed using equipment of the Center for Collective Use of the National Research Nuclear University MEPhI “Heterostructure Microwave Electronics and Physics of Wide-Gap Semiconductors”.

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Authors and Affiliations

  1. National Research Nuclear University “MEPhI” (Moscow Engineering Physics Institute), 115409, Moscow, Russia

    A. S. Gusev, N. I. Kargin, S. M. Ryndya, G. K. Safaraliev, N. V. Siglovaya, A. O. Sultanov & A. A. Timofeev

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  1. A. S. Gusev
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  2. N. I. Kargin
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  3. S. M. Ryndya
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  4. G. K. Safaraliev
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  5. N. V. Siglovaya
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  6. A. O. Sultanov
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  7. A. A. Timofeev
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Corresponding author

Correspondence to A. O. Sultanov.

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Translated by N. Petrov

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Gusev, A.S., Kargin, N.I., Ryndya, S.M. et al. Study of the Processes of Mesoporous-Silicon Carbonization. J. Surf. Investig. 13, 280–284 (2019). https://doi.org/10.1134/S1027451019020083

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  • DOI: https://doi.org/10.1134/S1027451019020083

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