Modification of Zinc-Implanted Silicon by Swift Xenon Ion Irradiation
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50 keV 64Zn+ ions to a dose of 5 × 1016 cm–2 are implanted into substrates of single-crystal n-type silicon. Then the samples are irradiated at room temperature with 167 MeV 132Xe26+ ions with a fluence ranging from 1 ×1012 up to 5 × 1014 cm–2. Changes in the structure and properties on the sample surface and in its body are studied by scanning electron microscopy, energy dispersive microanalysis, atomic force microscopy, time-of-flight secondary ion mass spectrometry, and photoluminescence.
Keywordssilicon zinc implantation zinc oxide swift xenon ion irradiation scanning electron microscopy energy-dispersive microanalysis atomic force microscopy time-of-flight secondary ion mass spectrometry photoluminescence radiation-induced point defects clusters of defects
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