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Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots

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Abstract

The results of studying the energy spectrum of electrons and holes localized in second-type Ge/Si heterostructures with Ge quantum dots are presented. In such structures, holes are localized at Ge quantum dots, and electrons, in three-dimensional quantum wells, which form in Si at the Ge—Si interface because of inhomogeneous deformations that appear as a result of the difference between the Ge and Si lattice constants. It is shown that changes in the deformations in the assembly of quantum dots as a result of a variation in their spatial arrangement significantly changes the binding energy of electrons, the position of their localization at quantum dots, the binding energy and wave-function symmetry of holes at double quantum dots (artificial molecules), and the exchange interaction of electrons and holes in the exciton composition. A practically important result of the presented data is the development of approaches to increase the luminescence quantum efficiency and the absorption coefficient in assemblies of quantum dots.

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Authors and Affiliations

  1. Rzhanov Institute of Semiconductor Physics, Siberian Branch, Russian Academy of Sciences, Novosibirsk, 630090, Russia

    A. A. Bloshkin, A. I. Yakimov, A. F. Zinovieva, V. A. Zinoviev & A. V. Dvurechenskii

  2. Novosibirsk State University, Novosibirsk, 630090, Russia

    A. A. Bloshkin & A. V. Dvurechenskii

  3. Tomsk State University, Tomsk, 634050, Russia

    A. I. Yakimov

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  1. A. A. Bloshkin
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  2. A. I. Yakimov
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  3. A. F. Zinovieva
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  4. V. A. Zinoviev
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  5. A. V. Dvurechenskii
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Correspondence to A. A. Bloshkin.

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Original Russian Text © A.A. Bloshkin, A.I. Yakimov, A.F. Zinovieva, V.A. Zinoviev, A.V. Dvurechenskii, 2018, published in Poverkhnost’, 2018, No. 4.

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Bloshkin, A.A., Yakimov, A.I., Zinovieva, A.F. et al. Energy Spectrum of Charge Carriers in Elastically Strained Assemblies of Ge/Si Quantum Dots. J. Surf. Investig. 12, 306–316 (2018). https://doi.org/10.1134/S1027451018020210

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  • DOI: https://doi.org/10.1134/S1027451018020210

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