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Influence of Zn+-Ion Implantation on the Process of Sapphire Charging by an Electron Beam

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Abstract

The influence of Zn ions implanted in a sapphire single crystal on the kinetics of attainment of the equilibrium state of the surface potential and current characteristics is considered. To consider the influence of the surface state on the dielectric charging process, one of the samples is annealed in an oxygen atmosphere to form ZnO on the surface. The obtained results show a significant increase in the rate of attainment of the equilibrium surface potential after ion implantation. To understand the obtained results, the dependence of the concentration of the doping impurity as a function of the crystal depth is measured. The possible mechanisms affecting a change in achievement of the potential are discussed.

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References

  1. M. Belhaj, T. Paulmier, R. Hanna, et al., Nucl. Instrum. Methods Phys. Res., Sect. B 320, 46 (2014).

    Article  Google Scholar 

  2. E. I. Rau, A. A. Tatarintsev, V. V. Khvostov, and V. E. Yurasova, Vacuum 129, 142 (2016).

    Article  Google Scholar 

  3. S. Fakhfakh, O. Jbara, M. Belhaj, et al., Nucl. Instrum. Methods Phys. Res., Sect. B 197, 114 (2002).

    Article  Google Scholar 

  4. E. N. Evstafeva, E. I. Rau, and A. A. Tatarintsev, Moscow Univ. Phys. Bull. 68 (2), 34 (2013).

    Google Scholar 

  5. E. I. Rau, S. Fakhfakh, M. V. Andrianov, et al., Nucl. Instrum. Methods Phys. Res., Sect. B 266 (5), 719 (2008).

    Article  Google Scholar 

  6. E. I. Rau, E. N. Evstafeva, and M. V. Andrianov, Phys. Solid State 50 (4), 621 (2008).

    Article  Google Scholar 

  7. V. V. Privezentsev, V. S. Kulikauskas, A. N. Palagushkin, et al., Solid State Phenom. 242, 396 (2016).

    Article  Google Scholar 

  8. H. Seiler, J. Appl. Phys. 54, R1 (2008).

    Article  Google Scholar 

  9. M. Pivi, F. King, R. Kirby, et al., J. Appl. Phys. 104, 104904 (2008).

    Article  Google Scholar 

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Authors and Affiliations

  1. Physical Faculty, Moscow State University, Moscow, 119991, Russia

    A. A. Tatarintsev & E. I. Rau

  2. Institute of Physics and Technology, Russian Academy of Sciences, Moscow, 117218, Russia

    A. A. Tatarintsev & V. V. Privezentsev

  3. Moscow Institute of Electronic Technology (NRU), Zelenograd, Moscow, 124498, Russia

    A. V. Goryachev

Authors
  1. A. A. Tatarintsev
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  2. V. V. Privezentsev
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  3. E. I. Rau
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  4. A. V. Goryachev
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Corresponding author

Correspondence to A. A. Tatarintsev.

Additional information

Original Russian Text © A.A. Tatarintsev, V.V. Privezentsev, E.I. Rau, A.V. Goryachev, 2018, published in Poverkhnost’, 2018, No. 3.

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Tatarintsev, A.A., Privezentsev, V.V., Rau, E.I. et al. Influence of Zn+-Ion Implantation on the Process of Sapphire Charging by an Electron Beam. J. Surf. Investig. 12, 213–216 (2018). https://doi.org/10.1134/S1027451018020143

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  • DOI: https://doi.org/10.1134/S1027451018020143

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