Abstract
It is established that the crystallographic orientation of a single-crystal silicon substrate affects the nucleation, shape, and evolution of silicon pores during its electrochemical etching. The shape, spatial orientation, and initiation of silicon pores is demonstrated to depend on both the etchant-solution properties caused by an etching-ion structure and the Si lattice symmetry.
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Original Russian Text © E.N. Abramova, Yu.V. Syrov, A.M. Khort, A.G. Yakovenko, D.I. Prokhorov, 2018, published in Poverkhnost’, 2018, No. 3.
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Abramova, E.N., Syrov, Y.V., Khort, A.M. et al. Influence of the Crystallographic Orientation of a Substrate on the Nucleation, Shape, and Evolution of Silicon Pores during its Electrochemical Etching in Hydrofluoric-Acid Solutions. J. Surf. Investig. 12, 217–221 (2018). https://doi.org/10.1134/S1027451018020027
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DOI: https://doi.org/10.1134/S1027451018020027