Ion-Beam Synthesis of Ferromagnetic Films by the Implantation of Co+ Ions into Silicon
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Thin ferromagnetic films of cobalt silicide are synthesized by implanting Co+ ions into single-crystal silicon plates under an external magnetic field. Scanning magnetopolarimetry shows that the samples implanted at a dose greater than 2 × 1017 cm–2 have uniaxial magnetic anisotropy. Based on the dose dependence of the anisotropy field and the experiment on switching the direction of the easy magnetization axes, it is concluded that the induced magnetic anisotropy in the resulting films is due to the directional atomic pair ordering. The absence of the effect of external mechanical stress created during implantation on the magnetic properties of cobalt-silicide films is revealed.
Keywordsion implantation ion-beam synthesis thin magnetic films magnetic anisotropy Kerr effect Néel–Taniguchi model of directional atomic pair ordering
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