Abstract
The results of studying the effect of thermal and laser annealing on the distribution profiles of phosphorus and boron atoms in Si(111), implanted with different energies and radiation doses, are presented. It is demonstrated that an almost uniform distribution of impurity atoms can be obtained in the near-surface region of Si(111) by means of high-dose ion implantation and thermal and laser annealing. By the phased ion implantation of P+ and B+ into different sides of Si(111) with a gradual decrease in energy and radiation dose, p–i–n structures with a controlled thickness of the p and n regions are obtained, which is of great practical importance in the establishment of various device structures.
This is a preview of subscription content, log in via an institution to check access.
Similar content being viewed by others
References
A. S. Rysbaev, Thin Nanosized Silicide Films: Synthesis and Properties (Tashkent State Technical Univ. Named after Abu Rayhon Beruni, Tashkent, 2013) [in Russian].
I. P. Suzdalev, Nanotechnology: Physical Chemistry of Nanoclusters, Nanostructures and Nanomaterials (Komkniga, Moscow, 2006) [in Russian].
A. S. Rysbaev, M. T. Normuradov, Yu. Yu. Yuldashev, et al., J. Commun. Technol. Electron. 42, 220 (1997).
M. T. Normuradov, D. S. Rumi, and A. S. Rysbaev, Izv. Akad. Nauk UzSSR, Ser. Fiz.-Mat. Nauk, No. 4, 70 (1986).
A. K. Tashatov, Doctoral Dissertation in Mathematics and Physics (Institute of Electronics Acad. Sci. Resp. Uzbekistan, Tashkent, 2005).
A. S. Rysbaev, Zh. B. Khuzhaniyazov, A. M. Rakhimov, et al., Tech. Phys. 59 (10), 1526 (2014).
A. S. Rysbaev, Doctoral Dissertation in Mathematics and Physics (Institute of Electronics Acad. Sci. Resp. Uzbekistan, Tashkent, 2003).
A. S. Rysbaev, Zh. B. Khuzhaniyazov, M. T. Normuradov, et al., Tech. Phys. 59 (11), 1705 (2014).
A. S. Rysbaev, Yu. Yu. Yuldashev, Zh. B. Khuzhaniyazov, and A. M. Rakhimov, UZ Patent No. IAP 04779, Byull. Izobret., No. 6 (2013).
Author information
Authors and Affiliations
Corresponding author
Additional information
Original Russian Text © A.S. Rysbaev, J.B. Khujaniyozov, I.R. Bekpulatov, A.M. Rakhimov, O.R. Pardaev, 2017, published in Poverkhnost’, 2017, No. 4, pp. 98–103.
Rights and permissions
About this article
Cite this article
Rysbaev, A.S., Khujaniyozov, J.B., Bekpulatov, I.R. et al. Effect of thermal and laser annealing on the atom distribution profiles in Si(111) implanted with P+ and B+ ions. J. Surf. Investig. 11, 474–479 (2017). https://doi.org/10.1134/S1027451017020318
Received:
Published:
Issue Date:
DOI: https://doi.org/10.1134/S1027451017020318