Abstract
The effect of irradiation on the dislocation structure of epitaxial GaN films, grown by the lateral-overgrowth method, is studied using the electron-beam-induced current mode in a scanning electron microscope. Low-energy electron-beam irradiation is found to lead to the gliding basal-plane dislocations even at very low excitation levels. Changes in the relative contrast of two segments of adjacent basal-plane dislocations may also indicate dislocation movement in the prismatic planes.
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Original Russian Text © E.B. Yakimov, P.S. Vergeles, 2016, published in Poverkhnost’, 2016, No. 9, pp. 81–84.
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Yakimov, E.B., Vergeles, P.S. Dislocation glide in GaN films grown by the lateral-overgrowth method induced by low-energy electron-beam irradiation. J. Surf. Investig. 10, 959–961 (2016). https://doi.org/10.1134/S1027451016050177
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DOI: https://doi.org/10.1134/S1027451016050177