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Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si/CaF2 structures

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Abstract

The results of analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si(111) structures in a wide temperature range from 100 to 600°С are presented. It is shown that the preliminary formation of a 2D Si buffer layer provides the two-dimensional growth of CaF2 layers. Possible reasons which for the disruption of 2D growth at high substrate temperatures are discussed.

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Authors and Affiliations

  1. Novosibirsk State Technical University, Novosibirsk, 630073, Russia

    A. A. Velichko, V. A. Ilyushin, A. U. Krupin, V. A. Gavrilenko & N. I. Filimonova

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  1. A. A. Velichko
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  2. V. A. Ilyushin
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  3. A. U. Krupin
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  4. V. A. Gavrilenko
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  5. N. I. Filimonova
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Correspondence to A. A. Velichko.

Additional information

Original Russian Text © A.A. Velichko, V.A. Ilyushin, A.U. Krupin, V.A. Gavrilenko, N.I. Filimonova, 2016, published in Poverkhnost’, 2016, No. 9, pp. 33–37.

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Velichko, A.A., Ilyushin, V.A., Krupin, A.U. et al. Analysis of the oscillation intensity of RHEED specular reflection during the MBE growth of CaF2/Si/CaF2 structures. J. Surf. Investig. 10, 912–916 (2016). https://doi.org/10.1134/S1027451016050165

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  • DOI: https://doi.org/10.1134/S1027451016050165

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